NTB6411AN ,NTB6411ANELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB6411ANG , N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6411ANT4G , N-Channel Power MOSFET 100 V, 72 A, 14 mΩ
NTB6412AN ,NTB6412ANELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB6412ANG , N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
NTB6412ANT4G , N-Channel Power MOSFET 100 V, 58 A, 18.2 mΩ
OPA847IDBVTG4 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with Shutdown 6-SOT-23 -40 to 85 SBOS251E – JULY 2002 – REVISED DECEMBER 2008Wideband, Ultra-Low Noise, Voltage-FeedbackOPERATIONAL ..
OPA860 ,Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFERMAXIMUM RATINGSPower Supply ±6.5VDCInternal Power Dissipation See Thermal InformationDifferential I ..
OPA860ID ,Wide Bandwidth OPERATIONAL TRANSCONDUCTANCE AMPLIFIER (OTA) and BUFFERFEATUREScentered about zero. The transconductance of the• Low Quiescent Current (11.2mA)OTA can be ..
OPA860IDRG4 ,Wide Bandwidth Operational Transconductance Amplifier and Buffer 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (continued)SR = 500Ω and R = 250Ω, unless otherwise noted.L ADJ ..
OPA875 ,Single 2:1 High-Speed Video MultiplexerELECTRICAL CHARACTERISTICS: V = ±5V (continued)SAt G = +2 and R = 150Ω, unless otherwise noted.LOPA ..
OPA875IDG4 ,Single 2:1 High-Speed Video Multiplexer 8-SOIC FEATURES DESCRIPTION2• 700MHz SMALL-SIGNAL BANDWIDTHThe OPA875 offers a very wideband, single-chann ..
NTB6411AN
NTB6411AN
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 100 V(BR)DSS GS DDrain−to−Source Breakdown Voltage Temper- V /T 113 mV/°C(BR)DSS Jature CoefficientZero Gate Voltage Drain Current I V = 0 V,T = 25°C 1.0 ADSS GS JV = 100 VDST = 125°C 100JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 8.6 mV/°CGS(th) JDrain−to−Source On−Resistance R V = 10 V, I = 72 A 12.7 14 mDS(on) GS DForward Transconductance g V = 5 V, I = 10 A 24 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 3700 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 550ossf = 1 MHzReverse Transfer Capacitance C 200rssTotal Gate Charge Q 100 nCG(TOT)Threshold Gate Charge Q 4.0G(TH)V = 10 V, V = 80 V,GS DSGate−to−Source Charge Q 16GSI = 72 ADGate−to−Drain Charge Q 47GDPlateau Voltage V 5.2 VGPGate Resistance R 3.1 GSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurn−On Delay Time t 16 nsd(on)Rise Time t 144rV = 10 V, V = 80 V,GS DDI = 72 A, R = 6.2D GTurn−Off Delay Time t 107d(off)Fall Time t 157fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V I = 72 A T = 25°C 0.92 1.3 VSD S JT = 125°C 0.86JReverse Recovery Time t 94 nsrrCharge Time t 64aV = 0 V, I = 72 A, GS SdI /dt = 100 A/sDischarge Time t S 30bReverse Recovery Charge Q 330 nCRR2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.
