NTB5860N ,60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NL ,60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NLT4G , N-Channel Power MOSFET
NTB5860NT4G , N-Channel Power MOSFET
NTB60N06 ,Power MOSFET 60 Amps, 60 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB60N06G ,Power MOSFET 60 Amps, 60 Volts3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA846 ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierMAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCDISCHARGE SENSITIVITYInternal Power Dissipa ..
OPA846IDBVR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierFEATURES APPLICATIONS* HIGH BANDWIDTH: 400MHz (G = +10) * HIGH DYNAMIC RANGE ADC PREAMPS* LOW INPUT ..
OPA846IDBVT ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = 25°C, G = +10, R = 453Ω , R = 50Ω , and R = 100Ω , unless othe ..
OPA846IDR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 453Ω , R = 100Ω, and G ..
OPA847 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C.R = 100Ω , R = 750Ω, R = 39 ..
OPA847 ,Wideband, Ultra-Low Noise,Voltage Feedback Operational Amplifier with ShutdownMAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCDISCHARGE SENSITIVITYInternal Power Dissipa ..
NTB5860N
60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFET
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 60 V(BR)DSS DS DDrainï toï Source Breakdown Voltage V /T 5.0 mV/°C(BR)DSS JI = 250 ADTemperature CoefficientZero Gate Voltage Drain Current I T = 25°C 1.0 ADSS JV = 0 VGSV = 60 VDST = 125°C 100JGateï Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 VGS(th) GS DS DThreshold Temperature Coefficient V /Tï 10.1 mV/°CGS(th) JDrainï toï Source Onï Resistance R V = 10 V, I = 75 A 2.5 3.0 mDS(on) GS DForward Transconductance g V = 15 V, I = 30 A 38 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C 10760 pFissV = 25 V, V = 0 V,DS GSOutput Capacitance C 1125ossf = 1 MHzTransfer Capacitance C 700rssTotal Gate Charge Q 180 nCG(TOT)Threshold Gate Charge Q 11G(TH)V = 10 V, V = 48 V,GS DSI = 65 ADGateï toï Source Charge Q 45GSGateï toï Drain Charge Q 57GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSnsTurnï On Delay Time t 27d(on)Rise Time t 117rV = 10 V, V = 48 V,GS DDI = 65 A, R = 2.5D GTurnï Off Delay Time t 66d(off)Fall Time t 150fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.76 1.1 VSD J dcV = 0 VGSI = 20 AST = 125°C 0.63JReverse Recovery Time t 55 nsrrCharge Time t 29aV = 0 V, I = 65 A,GS SdI /dt = 100 A/sSDischarge Time t 26bReverse Recovery Stored Charge Q 76 nCRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
