NTB5605P ,Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTB5605PT4G , Power MOSFET -60 Volt, -18.5 Amp
NTB5860N ,60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NL ,60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NLT4G , N-Channel Power MOSFET
NTB5860NT4G , N-Channel Power MOSFET
OPA843IDBVTG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 5-SOT-23 -40 to 85features. High-speed transimpedance applications* ADC/DAC BUFFER AMPLIFIER can be implemented with ..
OPA843IDG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 8-SOIC -40 to 85MAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCInternal Power Dissipation.. See Thermal An ..
OPA843IDR ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = +25°C, G = +5, R = 402Ω , R = 100Ω , and R = 100Ω , unless oth ..
OPA846 ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierMAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCDISCHARGE SENSITIVITYInternal Power Dissipa ..
OPA846IDBVR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierFEATURES APPLICATIONS* HIGH BANDWIDTH: 400MHz (G = +10) * HIGH DYNAMIC RANGE ADC PREAMPS* LOW INPUT ..
OPA846IDBVT ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = 25°C, G = +10, R = 453Ω , R = 50Ω , and R = 100Ω , unless othe ..
NTB5605P
Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAK
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = −250 A −60 V(Br)DSS GS DDrain−to−Source Breakdown Voltage V /T −64 mV/°C(Br)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V T = 25°C −1.0 ADSS GS JV = −60 V T = 125°C −10DS JGate−to−Source Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 3)Gate Threshold Voltage V V = V , I = −250 A −1.0 −1.5 −2.0 VGS(th) GS DS DDrain−to−Source On Resistance R V = −5.0 V, I = −8.5 A 120 140 mDS(on) GS DV = −5.0 V, I = −17 A 140GS DForward Transconductance g V = −10 V, I = −8.5 A 12 SFS DS DDrain−to−Source On Voltage V V = −5.0 V, I = −8.5 A −1.3 VDS(on) GS DCHARGES, CAPACITANCES AND GATE RESISTANCEInput Capacitance C 730 1190issV = 0 V, f = 1.0 MHz,GSOutput Capacitance C 211 300pFossV V = −25 V = −25 VDS DSReverse Transfer Capacitance C 67 120rssTotal Gate Charge Q 13 22G(TOT)V = −5.0 V, V = −48 V,GS DSGate−to−Source Charge Q 4.0 nCGSII = −17 = −17 A AD DGate−to−Drain Charge Q 7.0GDSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t 12.5 25d(on)Rise Time t 122 183rV V = −5.0 V = −5.0 V, , V V = −30 V = −30 V,,GS GS DD DDns nsI = −17 A, R = 9.1 D GTurn−Off Delay Time t 29 58d(off)Fall Time t 75 150fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C −1.55 −2.5 VSD JV V = 0 V 0 VGS GSI = −17 AS T = 125°C −1.4JReverse Recovery Time t 60rrCharge Time t 39 nsaV V = 0 V = 0 V, , dI dI /dt = 100 A/ /dt = 100 A/s, s,GS GS S SI = −17 ASDischarge Time t 21bReverse Recovery Charge Q 0.14 nCRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
