NTB5426N ,DatasheetELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5426NT4G , Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5605P ,Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTB5605PT4G , Power MOSFET -60 Volt, -18.5 Amp
NTB5860N ,60 V, 3 mOhm, 220 A, N-Channel, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5860NL ,60 V, 3 mOhm, 220 A, N-Channel, Logic Level, D2PAK Power MOSFETELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
OPA843IDBVT ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier.PIN CONFIGURATIONSTop View SOTTop View SOOutput 1 5 +VS–V 2SNoninverting Input 3 4 Inverting Input ..
OPA843IDBVTG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 5-SOT-23 -40 to 85features. High-speed transimpedance applications* ADC/DAC BUFFER AMPLIFIER can be implemented with ..
OPA843IDG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 8-SOIC -40 to 85MAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCInternal Power Dissipation.. See Thermal An ..
OPA843IDR ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = +25°C, G = +5, R = 402Ω , R = 100Ω , and R = 100Ω , unless oth ..
OPA846 ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierMAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCDISCHARGE SENSITIVITYInternal Power Dissipa ..
OPA846IDBVR ,OPA846: Wideband, Low Noise, Voltage Feedback Operational AmplifierFEATURES APPLICATIONS* HIGH BANDWIDTH: 400MHz (G = +10) * HIGH DYNAMIC RANGE ADC PREAMPS* LOW INPUT ..
NTB5426N
Datasheet
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 60 V(BR)DSS DS DDrain−to−Source Breakdown Voltage V /T 64 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V T = 25°C 1.0 ADSS GS JV = 60 VDST = 150°C 25JGate−Body Leakage Current I V = 0 V, V = 20 V 100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 2.0 3.1 4.0 VGS(th) GS DS DNegative Threshold Temperature Coefficient V /T 9.2 mV/°CGS(th) JDrain−to−Source On Voltage V VV = 10 V, I = 60 A 0.3 0.36DS(on) GS DV = 10 V, I = 60 A, 150°C 0.6GS DStatic Drain−to−Source On−Resistance R V = 10 V, I = 60 A 4.9 6.0 mDS(on) GS DForward Transconductance g V = 15 V, I = 20 A 65 SFS DS DCHARGES, CAPACITANCES & GATE RESISTANCEInput Capacitance C V = 25 V, V = 0 V, 5800 pFiss DS GSf = 1 MHzOutput Capacitance C 1000ossTransfer Capacitance C 370rssTotal Gate Charge Q V = 10 V, V = 48 V, 150 170 nCG(TOT) GS DSI = 60 ADThreshold Gate Charge Q 6.0G(TH)Gate−to−Source Charge Q 28GSGate−to−Drain Charge Q 67GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurn−On Delay Time t V = 10 V, V = 48 V, 15 nsd(on) GS DDI = 60 A, R = 3.0D GRise Time t 100rTurn−Off Delay Time t 105d(off)Fall Time t 95fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V T = 25°C 0.88 1.1 VSD GS J dcI = 60 AST = 100°C 0.78JReverse Recovery Time t I = 60 A , V = 0 V , 75 nsrr S dc GS dcdI /dt = 100 A/sSCharge Time t 50aDischarge Time t 25bReverse Recovery Stored Charge Q 235 CRR2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.3. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATION†Device Package ShippingNTP5426N TO−220AB (Pb−Free) 50 Units / Rail2NTB5426NT4G D PAK (Pb−Free) 800 / Tape & Reel†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
