NTB5405N ,Power MOSFET, 40 V, 116 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB5405NT4G , Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5426N ,DatasheetELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5426NT4G , Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5605P ,Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTB5605PT4G , Power MOSFET -60 Volt, -18.5 Amp
OPA843ID ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierHarmonic Distortion (dBc)(1)ABSOLUTE
OPA843IDBVR ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierTHERMAL CHARACTERISTICSSpecified Operating Range: D, DBV –40 to +85 °C typ CThermal Resistance, θ J ..
OPA843IDBVT ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier.PIN CONFIGURATIONSTop View SOTTop View SOOutput 1 5 +VS–V 2SNoninverting Input 3 4 Inverting Input ..
OPA843IDBVTG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 5-SOT-23 -40 to 85features. High-speed transimpedance applications* ADC/DAC BUFFER AMPLIFIER can be implemented with ..
OPA843IDG4 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier 8-SOIC -40 to 85MAXIMUM RATINGSELECTROSTATICPower Supply ....... ±6.5VDCInternal Power Dissipation.. See Thermal An ..
OPA843IDR ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierTYPICAL CHARACTERISTICS: V = ±5VST = +25°C, G = +5, R = 402Ω , R = 100Ω , and R = 100Ω , unless oth ..
NTB5405N
Power MOSFET, 40 V, 116 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 39 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 40 VDST = 100°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±30 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DGate Threshold Temperature V /Tï 7.0 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 40 A 4.9 5.8 mDS(on) GS DV = 5.0 V, I = 15 A 7.0 8.0GS DForward Transconductance g V = 10 V, I = 15 A 32 SFS GS DCHARGES AND CAPACITANCESInput Capacitance C 2700 4000 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 700 1400OSSV = 32 VDSReverse Transfer Capacitance C 300 600RSSTotal Gate Charge Q 88 nCG(TOT)Threshold Gate Charge Q 3.25G(TH)V = 10 V, V = 32 V, GS DSI = 40 ADGateï toï Source Charge Q 9.5GSGateï toï Drain Charge Q 37GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 8.5 nsd(ON)Rise Time t 52rV = 10 V, V = 32 V, GS DDI = 40 A, R = 2.5 D GTurnï Off Delay Time t 55d(OFF)Fall Time t 70fSWITCHING CHARACTERISTICS, V = 5 V (Note 3)GSTurnï On Delay Time t 19 nsd(ON)Rise Time t 153rV = 5 V, V = 20 V, GS DDI = 20 A, R = 2.5 D GTurnï Off Delay Time t 32d(OFF)Fall Time t 42fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.82 1.1 VSDJV = 0 V, GSI = 20 AST = 100°C TBDJnsReverse Recovery Time t 66RRCharge Time t 35aV = 0 V, dI /dt = 100 A/s,GS SDI = 20 ASDischarge Time t 31bReverse Recovery Charge Q 113 nCRR2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
