NTB5404N ,Power MOSFET, 40 V, 167 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB5405N ,Power MOSFET, 40 V, 116 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB5405NT4G , Power MOSFET 40 V, 116 A, Single N−Channel, D2PAK
NTB5426N ,DatasheetELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Test Condi ..
NTB5426NT4G , Power MOSFET 120 Amps, 60 Volts N-Channel D2PAK, TO-220
NTB5605P ,Power MOSFET 60 V, 17 A, P-Channel D<sup>2</sup>PAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
OPA842IDR ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational AmplifierFEATURES DESCRIPTION2• UNITY-GAIN BANDWIDTH: 400MHzThe OPA842 provides a level of speed and dynamic ..
OPA842IDRG4 ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational Amplifier 8-SOIC -40 to 85 SBOS267D –NOVEMBER 2002–REVISED SEPTEMBER 2010Wideband, Low Distortion, Unity-Gain Stable, Voltage ..
OPA843 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational Amplifier SBOS268C – DECEMBER 2002 – DECEMBER 2008Wideband, Low Distortion, Medium Gain,Voltage-Feedback OPE ..
OPA843 ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierFEATURESThe OPA843 provides a level of speed and dynamic range* HIGH BANDWIDTH: 260MHz (G = +5)prev ..
OPA843ID ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierHarmonic Distortion (dBc)(1)ABSOLUTE
OPA843IDBVR ,Wideband, Low Distortion, Medium Gain, Voltage Feedback Operational AmplifierTHERMAL CHARACTERISTICSSpecified Operating Range: D, DBV –40 to +85 °C typ CThermal Resistance, θ J ..
NTB5404N
Power MOSFET, 40 V, 167 A, Single N-Channel
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I = 250 A 40 V(BR)DSS GS DDrainï toï Source Breakdown Voltage V /T 34 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, T = 25°C 1.0 ADSS GS JV = 40 VDST = 100°C 10JGateï toï Source Leakage Current I V = 0 V, V = ±30 V ±100 nAGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 VGS(TH) GS DS DGate Threshold Temperature V /Tï 8.2 mV/°CGS(TH) JCoefficientDrainï toï Source On Resistance R V = 10 V, I = 40 A 3.5 4.5 mDS(on) GS DV = 5.0 V, I = 15 A 5.1 7.0GS DForward Transconductance g V = 10 V, I = 15 A 35 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C 4300 7000 pFISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 1075 1700OSSV = 32 VDSReverse Transfer Capacitance C 450 1000RSSTotal Gate Charge Q 125 nCG(TOT)Threshold Gate Charge Q 5.5G(TH)V = 10 V, V = 32 V, GS DSI = 40 ADGateï toï Source Charge Q 12.5GSGateï toï Drain Charge Q 55GDSWITCHING CHARACTERISTICS, V = 10 V (Note 3)GSTurnï On Delay Time t 10 nsd(ON)Rise Time t 65rV = 10 V, V = 32 V, GS DDI = 40 A, R = 2.5 D GTurnï Off Delay Time t 85d(OFF)Fall Time t 85fSWITCHING CHARACTERISTICS, V = 5 V (Note 3)GSTurnï On Delay Time t 25 nsd(ON)Rise Time t 175rV = 5 V, V = 20 V, GS DDI = 20 A, R = 2.5 D GTurnï Off Delay Time t 46d(OFF)Fall Time t 62fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.8 1.1 VSDJV = 0 V, GSI = 20 AST = 125°C 0.65JnsReverse Recovery Time t 75RRCharge Time t 38aV = 0 V, dI /dt = 100 A/s,GS SDI = 20 ASDischarge Time t 38bReverse Recovery Charge Q 140 nCRR2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
