NTB45N06LT4G ,Power MOSFET 45 Amps, 60 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTB45N06T4G , Power MOSFET 45 Amps, 60 Volts
NTB52N10 ,Power MOSFET 52 Amps, 100 Volts3R DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) R , DRAIN–TO–SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
NTB52N10G , N-Channel Enhancement−Mode D2PAK
NTB5404N ,Power MOSFET, 40 V, 167 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB5405N ,Power MOSFET, 40 V, 116 A, Single N-ChannelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
OPA832IDBVT ,Low-Power, Single-Supply, Fixed-Gain Video Buffer AmplifierELECTRICAL CHARACTERISTICS: V = +5V SBoldface limits are tested at +25°C.At T = 25°C, G = +2, and ..
OPA842 ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational Amplifier SBOS267D –NOVEMBER 2002–REVISED SEPTEMBER 2010
OPA842ID ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational AmplifierELECTRICAL CHARACTERISTICS: V = ±5VSBoldface limits are tested at +25°C. At T = +25°C, V = ±5V, R = ..
OPA842IDBVR ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational AmplifierThis integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
OPA842IDBVT ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational Amplifier.(1)ABSOLUTE
OPA842IDBVTG4 ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational Amplifier 5-SOT-23 -40 to 85OPA842
NTB45N06L-NTB45N06LT4-NTB45N06LT4G
Power MOSFET 45 Amps, 60 Volts, Logic Level
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V Vdc(BR)DSS(V = 0 Vdc, I = 250 Adc) 60 67 −GS DTemperature Coefficient (Positive) − 67.2 − mV/°CZero Gate Voltage Drain Current I AdcDSS(V = 60 Vdc, V = 0 Vdc) − − 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) − − 10DS GS JGate−Body Leakage Current (V = ±15 Vdc, V = 0 Vdc) I − − ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 4)Gate Threshold Voltage (Note 4) V VdcGS(th)(V = V , I = 250 Adc) 1.0 1.8 2.0DS GS DThreshold Temperature Coefficient (Negative) − 4.7 − mV/°CStatic Drain−to−Source On−Resistance (Note 4) R mDS(on)(V = 5.0 Vdc, I = 22.5 Adc) − 23 28GS DStatic Drain−to−Source On−Voltage (Note 4) V VdcDS(on)(V = 5.0 Vdc, I = 45 Adc) − 1.03 1.51GS D(V = 5.0 Vdc, I = 22.5 Adc, T = 150°C) − 0.93 −GS D JForward Transconductance (Note 4) (V = 8.0 Vdc, I = 12 Adc) g − 22.8 − mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C − 1212 1700 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0VdDS GSOutput Capacitance C − 352 480ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C − 90 180rssSWITCHING CHARACTERISTICS (Note 5)Turn−On Delay Time t − 13 30 nsd(on)Rise Time t − 341 680r(V (V = 30 Vdc, I 30 Vdc, I = 45 Adc, 45 Adc,DD DD D DV = 5.0 Vdc, R = 9.1 ) (Note 4)GS GTurn−Off Delay Time t − 36 75d(off)Fall Time t − 158 320fGate Charge Q − 23 32 nCT(V (V = 48 Vdc, I 48 Vd I = 45 Adc, 45 AdDS DQ − 4.6 −1V V = 5.0 Vdc = 5.0 Vdc) ) ( (Note Note 4 4) )GS GSQ − 14.1 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−Voltage (I = 45 Adc, V = 0 Vdc) (Note 4) V − 1.01 1.15 VdcS GS SD(I = 45 Adc, V = 0 Vdc, T = 150°C) − 0.92 −S GS JReverse Recovery Time t − 56 − nsrr(I (I = 45 Adc, V 45 Ad V = 0 Vdc, 0VdS GSt − 30 −adI dI /dt /dt = 100 A/ = 100 A/s s) ) ( (Note Note 4 4) )S St − 26 −bReverse Recovery Stored Charge Q − 0.09 − CRR23. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.5. Switching characteristics are independent of operating junction temperatures.
