NTB45N06 ,Power MOSFET 45 Amps, 60 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)D PAKJ TO–220ABCASE 418BCASE 221ARating Symbol Val ..
NTB45N06L ,Power MOSFET 45 Amps, 60 Volts, Logic Level3NTP45N06L, NTB45N06L80 80V = 5.5 VV = 10 V GSGSV > = 10 VDS70 70V = 5 VGS60 V = 6 V 60GSV = 4.5 V5 ..
NTB45N06LT4 ,Power MOSFET 45 Amps, 60 Volts, Logic LevelELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB45N06LT4G ,Power MOSFET 45 Amps, 60 Volts, Logic LevelMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTB45N06T4G , Power MOSFET 45 Amps, 60 Volts
NTB52N10 ,Power MOSFET 52 Amps, 100 Volts3R DRAIN–TO–SOURCE RESISTANCE (NORMALIZED) R , DRAIN–TO–SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA830IDG4 ,Low-Power, Single-Supply Operational Amplifier 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V SBoldface limits are tested at +25°C.At T = 25°C, G = +2, R = ..
OPA830IDRG4 ,Low-Power, Single-Supply Operational Amplifier 8-SOIC -40 to 85FEATURES DESCRIPTION HIGH BANDWIDTH:The OPA830 is a low-power, single-supply, wideband,250MHz (G = ..
OPA832ID ,Low-Power, Single-Supply, Fixed-Gain Video Buffer AmplifierELECTRICAL CHARACTERISTICS: V = ±5V SBoldface limits are tested at +25°C.At T = 25°C, G = +2, and ..
OPA832IDBVR ,Low-Power, Single-Supply, Fixed-Gain Video Buffer AmplifierFEATURES DESCRIPTION HIGH BANDWIDTH: 80MHz (G = +2) The OPA832 is a low-power, high-speed, fixed-g ..
OPA832IDBVT ,Low-Power, Single-Supply, Fixed-Gain Video Buffer AmplifierELECTRICAL CHARACTERISTICS: V = +5V SBoldface limits are tested at +25°C.At T = 25°C, G = +2, and ..
OPA842 ,Wideband, Low Distortion, Unity Gain Stable, Voltage Feedback Operational Amplifier SBOS267D –NOVEMBER 2002–REVISED SEPTEMBER 2010
NTB45N06-NTP45N06
Power MOSFET 45 Amps, 60 Volts
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain–to–Source Breakdown Voltage (Note 5.) V Vdc(BR)DSS(V = 0 Vdc, I = 250 μAdc) 60 70 –GS DTemperature Coefficient (Positive) – 57 – mV/°CZero Gate Voltage Drain Current I μAdcDSS(V = 60 Vdc, V = 0 Vdc) – – 1.0DS GS(V = 60 Vdc, V = 0 Vdc, T = 150°C) – – 10DS GS JGate–Body Leakage Current (V = ±20 Vdc, V = 0 Vdc) I – – ±100 nAdcGS DS GSSON CHARACTERISTICS (Note 5.)Gate Threshold Voltage (Note 5.) V VdcGS(th)(V = V , I = 250 μAdc) 2.0 2.8 4.0 mV/°CDS GS DThreshold Temperature Coefficient (Negative) – 7.2 –Static Drain–to–Source On–Resistance (Note 5.) R mOhmDS(on)(V = 10 Vdc, I = 22.5 Adc) – 21 26GS DStatic Drain–to–Source On–Voltage (Note 5.) V VdcDS(on)(V = 10 Vdc, I = 45 Adc) – 0.93 1.4GS D(V = 10 Vdc, I = 22.5 Adc, T = 150°C) – 0.93 –GS D JForward Transconductance (Note 5.) (V = 8.0 Vdc, I = 12 Adc) g – 16.6 – mhosDS D FSDYNAMIC CHARACTERISTICSInput Capacitance C – 1224 1725 pFiss(V (V = 25 Vdc, V 25 Vd V = 0 Vdc, 0 VdDS GSOutput CapacitanceC – 345 485ossf f = 1.0 MHz = 1.0 MHz) )Transfer Capacitance C – 76 160rssSWITCHING CHARACTERISTICS (Note 6.)Turn–On Delay Time t – 10 25 nsd(on)Rise Time t – 101 200r(V (V = 30 Vdc, I 30 Vdc, I = 45 Adc, 45 Adc,DD DD D DV = 10 Vdc, R = 9.1 Ω) (Note 5.)GS GTurn–Off Delay Time t – 33 70d(off)Fall Time t – 106 220fGate Charge Q – 33 46 nCT(V (V = 48 Vdc, I 48 Vd I = 45 Adc, 45 AdDS DQ – 6.4 –1V V = 10 Vdc = 10 Vdc) ) (Note (Note 5. 5.) )GS GSQ – 15 –2SOURCE–DRAIN DIODE CHARACTERISTICSForward On–Voltage (I = 45 Adc, V = 0 Vdc) (Note 5.) V – 1.08 1.2 VdcS GS SD(I = 45 Adc, V = 0 Vdc, T = 150°C) – 0.93 –S GS JReverse Recovery Time t – 53.1 – nsrr(I (I = 45 Adc, V 45 Ad V = 0 Vdc, 0 VdS GSt – 36 –adI dI /dt /dt = 100 A/ = 100 A/μ μs) s) ( (Note Note 5. 5.) )S St – 16.9 –bReverse Recovery Stored Charge Q – 0.087 – μCRR23. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in ).24. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).5. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.6. Switching characteristics are independent of operating junction temperatures.
