NTB125N02R ,Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAKELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Ma ..
NTB18N06 , Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK
NTB18N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTB18N06LT4 ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB18N06LT4G ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
NTB23N03RG ,Power MOSFET 23 Amps, 25 Volts N−Channel D2PAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)J Characteristics Symbol Min Typ Ma ..
OPA735AIDBVRG4 ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational Amplifier 5-SOT-23 -40 to 85MAXIMUM RATINGSInstruments recommends that all integrated circuits beSupply Voltage . . . . . . . . ..
OPA735AIDBVT ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierSBOS282B − DECEMBER 2003 − REVISED FEBRUARY 2005This integrated circuit can be damaged by ESD. Texa ..
OPA735AIDBVTG4 ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational Amplifier 5-SOT-23 -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (V = +10V) S SBoldface limits apply over the specified tempera ..
OPA735AIDR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierSBOS282B − DECEMBER 2003 − REVISED FEBRUARY 2005
OPA743NA/250G4 ,12V, 7MHz, CMOS Rail-to-Rail I/O Operational Amplifier 5-SOT-23 -40 to 85MAXIMUM RATINGSELECTROSTATICSupply Voltage, V+ to V– .. 13.2VDISCHARGE SENSITIVITY(2)Signal Input T ..
OPA743NA/3K ,12V, 7MHz, CMOS Rail-to-Rail I/O Operational AmplifierFEATURES DESCRIPTION* HIGH SPEED: 7MHz, 10V/µ s The OPA743 series utilizes a state-of-the-art 12V a ..
NTB125N02R
Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAK
ELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage (Note 3) V V(BR)DSS dc(V = 0 V , I = 250 A ) 25 28 −GS dc D dcTemperature Coefficient (Positive) − 15 − mV/°CZero Gate Voltage Drain Current I ADSS dc(V = 20 V , V = 0 V ) − − 1.5DS dc GS dc(V = 20 V , V = 0 V , T = 125°C) − − 10DS dc GS dc JGate−Body Leakage Current I nAGSS dc(V = ±20 V , V = 0 V ) − − ±100GS dc DS dcON CHARACTERISTICS (Note 3)Gate Threshold Voltage (Note 3) V VGS(th) dc(V = V , I = 250 A ) 1.0 1.5 2.0DS GS D dcThreshold Temperature Coefficient (Negative) − 5.0 − mV/°CStatic Drain−to−Source On−Resistance (Note 3) R mDS(on)(V = 10 V , I = 110 A ) − 3.7 −GS dc D dc(V = 4.5 V , I = 55 A ) − 4.9 −GS dc D dc(V = 10 V , I = 20 A ) − 3.7 4.6GS dc D dc(V = 4.5 V , I = 20 A ) − 4.7 6.2GS dc D dcForward Transconductance (Note 3) g MhosFS(V = 10 V , I = 15 A ) − 44 −DS dc D dcDYNAMIC CHARACTERISTICSInput Capacitance C − 2710 3440 pFissOutput Capacitance C − 1105 1670(V ( = 20 V , , V = 0 V,) , f = 1 MHz) ossDS DS dc dc GS GSTransfer Capacitance C − 227 640rssSWITCHING CHARACTERISTICS (Note 4)Turn−On Delay Time t − 11 22 nsd(on)Rise Time t − 39 80r( (V V = 10 V = 10 V , , V V = 10 V = 10 V ,,GS GS dc dc DD DD dc dcI = 40 A , R = 3)D dc GTurn−Off Delay Time t − 27 40d(off)Fall Time tf − 21 40Gate Charge Q − 23.6 28 nCT(V = 4.5 V , I = 40 A ,GS dc D dcQ − 5.1 −1V = 10 V ) (Note 3)V = 10 V ) (Note 3)DS DS dc dcQ − 11 −2SOURCE−DRAIN DIODE CHARACTERISTICSForward On−V Forward On−Voltage oltage (I (I = 20 = 20 A A , , V V = 0 V = 0 V ) ) (Note 3) (Note 3) V V − − 0.82 0.82 1 1.2 .2 V VS S dc dc GS GS dc dc S SD D dc dc( (I = 55 A , , V = 0 V ) ) − 0.99 −S S dc dc GS GS dc dc(I (I = 20 20 A A , V V = 0 V 0V , T T = 125 125° °C) C) − 0.65 065 −S dc GS dc JReverse Recovery Time t − 36.5 − nsrrt − 17.7 −a(I (I = 30 = 30 A A , , V V = 0 V = 0 V ,,S S d dc c GS GS d dc cdI /dt = 100 A/s) (Note 3)St − 18.8 −bReverse Recovery Stored Charge Q − 0.024 − CRR3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.4. Switching characteristics are independent of operating junction temperatures.
