NTA4153N ,Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB125N02R ,Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAKELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Ma ..
NTB18N06 , Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK
NTB18N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTB18N06LT4 ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTB18N06LT4G ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 Pak3R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R , DRAIN−TO−SOURCE RESISTANCE () I , DRAIN CURRENT (AM ..
OPA734AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierFEATURES DESCRIPTIONThe OPA734 and OPA735 series of CMOS operational LOW OFFSET VOLTAGE: 5µV (max) ..
OPA734AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierOPA734, OPA2734OPA735, OPA2735SBOS282B − DECEMBER 2003 − REVISED FEBRUARY 20050.05µV/°C max, SINGLE ..
OPA734AIDG4 ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational Amplifier 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (V = +10V) S SBoldface limits apply over the specified tempera ..
OPA735AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierFEATURES DESCRIPTIONThe OPA734 and OPA735 series of CMOS operational LOW OFFSET VOLTAGE: 5µV (max) ..
OPA735AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierOPA734, OPA2734OPA735, OPA2735SBOS282B − DECEMBER 2003 − REVISED FEBRUARY 20050.05µV/°C max, SINGLE ..
OPA735AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational Amplifier.2"#$% &"#$"#'% &"#'
NTA4153N
Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 250 A 20 26 V(BR)DSS GS DDrain−to−Source Breakdown Voltage V /T 18.4 mV/°C(BR)DSS JTemperature CoefficientZero Gate Voltage Drain Current I V = 0 V, V = 16 V 100 nADSS GS DSGate−to−Source Leakage Current I V = 0 V, V = ±4.5 V ±1.0 AGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = 250 A 0.45 0.76 1.1 VGS(TH) GS DS DNegative Threshold Temperature V /T −2.15 mV/°CGS(TH) JCoefficientDrain−to−Source On Resistance RV = 4.5 V, I = 600 mA 127 230DS(on) GS D mV = 2.5 V, I = 500 mA 170 275GS DV = 1.8 V, I = 350 mA 242 700GS DV = 1.5 V, I = 40 mA 500 9500GS DForward Transconductance g V = 10 V, I = 400 mA 1.4 SFS DS DCHARGES AND CAPACITANCESpFInput Capacitance C 110ISSV = 0 V, f = 1.0 MHz, GSOutput Capacitance C 16OSSV = 16 VDSReverse Transfer Capacitance C 12RSSTotal Gate Charge Q 1.82 nCG(TOT)Threshold Gate Charge Q 0.2G(TH)V = 4.5 V, V = 10 V, GS DSI = 0.2 ADGate−to−Source Charge Q 0.3GSGate−to−Drain Charge Q 0.42GDSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 3.7 nsd(ON)Rise Time t 4.4rV = 4.5 V, V = 10 V, GS DDI = 0.2 A, R = 10 D GTurn−Off Delay Time t 25d(OFF)Fall Time t 7.6fDRAIN−SOURCE DIODE CHARACTERISTICSForward Diode Voltage V T = 25°C 0.67 1.1 VSD JV = 0 V, GSI = 200 mAST = 125°C 0.54J2. Pulse Test: pulse width ≤ 300s, duty cycle ≤ 2%.3. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATIONMarking†(XX)Device Package ShippingNTA4153NT1 TR SC−75 / SOT−416 3000/Tape & ReelNTA4153NT1G TR SC−75 / SOT−416 3000/Tape & Reel(Pb−Free)NTE4153NT1G TP SC−89 3000/Tape & Reel(Pb−Free)†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
