NTA4151P ,Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75 and SC-89ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTA4153N ,Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB125N02R ,Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAKELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Ma ..
NTB18N06 , Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK
NTB18N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
NTB18N06LT4 ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
OPA734AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierMAXIMUM RATINGSInstruments recommends that all integrated circuits beSupply Voltage . . . . . . . . ..
OPA734AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierFEATURES DESCRIPTIONThe OPA734 and OPA735 series of CMOS operational LOW OFFSET VOLTAGE: 5µV (max) ..
OPA734AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierOPA734, OPA2734OPA735, OPA2735SBOS282B − DECEMBER 2003 − REVISED FEBRUARY 20050.05µV/°C max, SINGLE ..
OPA734AIDG4 ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational Amplifier 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (V = +10V) S SBoldface limits apply over the specified tempera ..
OPA735AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierFEATURES DESCRIPTIONThe OPA734 and OPA735 series of CMOS operational LOW OFFSET VOLTAGE: 5µV (max) ..
OPA735AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Series Operational AmplifierOPA734, OPA2734OPA735, OPA2735SBOS282B − DECEMBER 2003 − REVISED FEBRUARY 20050.05µV/°C max, SINGLE ..
NTA4151P
Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75 and SC-89
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrainï toï Source Breakdown Voltage V V = 0 V, I =ï 250Aï 20 V(BR)DSS GS DZero Gate Voltage Drain Current I V = 0 V, V =ï 16 Vï 1.0ï 100 nADSS GS DSGateï toï Source Leakage Current I V = 0 V, V = ±4.5 V 1.0 10 AGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = V , I = ï 250Aï 0.45 VGS(TH)DS GS DDrainï toï Source On Resistance R V =ï 4.5 V, I =ï 350 mA 0.26 0.36 DS(on) GS DV =ï 2.5 V, I =ï 300 mA 0.35 0.45GS DV =ï 1.8 V, I =ï 150 mA 0.49 1.0GS DForward Transconductance g V =ï 10 V, I =ï 250 mA 0.4 SFS DS DCHARGES AND CAPACITANCESInput Capacitance C V = 0 V, f = 1.0 MHz, 156 pFGSISSV =ï 5.0 VDSOutput Capacitance C 28OSSReverse Transfer Capacitance C 18RSSTotal Gate Charge Q V =ï 4.5 V, V = ï 10 V, 2.1 nCGS DDG(TOT)I =ï 0.3 ADThreshold Gate Charge Q 0.125G(TH)Gateï toï Source Charge Q 0.325GSGateï toï Drain Charge Q 0.5GDSWITCHING CHARACTERISTICS (Note 3)V =ï 4.5 V, V =ï 10 V, nsTurnï On Delay Time td 8.0(ON) GS DDI =ï 200 mA, R = 10 D GRise Time t 8.2rTurnï Off Delay Time td 29(OFF)Fall Time t 20.4fDRAINï SOURCE DIODE CHARACTERISTICSForward Diode Voltage V V = 0 V, I =ï 250 mAï 0.72ï 1.1 VSD GS S2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.ORDERING INFORMATIONDevice Marking Package ShippingNTA4151PT1G TN SCï 75 3000 / Tape & Reel(Pbï Free)NTA4151PT1H TN SCï 75 3000 / Tape & Reel(Pbï Free)NTE4151PT1G TM SCï 89 3000 / Tape & Reel(Pbï Free)For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.
