NTA4001NT1G ,Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection2NTA4001N0.20.2V = 10 VVDS = 5 VGS0.18V = 2 VV = 5 V GSGS0.16V = 2.8 V 0.16GS0.140.120.12T = 25°CV ..
NTA4151P ,Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75 and SC-89ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTA4153N ,Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection SC-75 and SC-89ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)JParameter Symbol Test Condition Min T ..
NTB125N02R ,Power MOSFET 125 A / 24 V N-Channel TO-220 / D2PAKELECTRICAL CHARACTERISTICS (T = 25°C Unless otherwise specified) JCharacteristics Symbol Min Typ Ma ..
NTB18N06 , Power MOSFET 15 A, 60 V, N−Channel TO−220 & D2PAK
NTB18N06L ,Power MOSFET 15 Amps, 60 Volts, Logic Level N-Channel, D2 PakMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitGDrain−to−Source Voltage ..
OPA727AIDRBT ,e-trim 20MHz, High Precision CMOS Operational AmplifierSBOS314H–SEPTEMBER 2004–REVISED APRIL 2007PIN CONFIGURATIONSOPA727OPA2727MSOP-8SO-8(TOP VIEW)(TOP V ..
OPA727AIDRBTG4 ,e-trim 20MHz, High Precision CMOS Operational Amplifier 8-SON OPA2727OPA4727OPA728OPA727OPA728OPA2727 OPA727 OPA727,, OPA2727 ..
OPA734AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierMAXIMUM RATINGSInstruments recommends that all integrated circuits beSupply Voltage . . . . . . . . ..
OPA734AID ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierFEATURES DESCRIPTIONThe OPA734 and OPA735 series of CMOS operational LOW OFFSET VOLTAGE: 5µV (max) ..
OPA734AIDBVR ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational AmplifierOPA734, OPA2734OPA735, OPA2735SBOS282B − DECEMBER 2003 − REVISED FEBRUARY 20050.05µV/°C max, SINGLE ..
OPA734AIDG4 ,0.05uV/degC (max), Single-Supply CMOS Zero-Drift Operational Amplifier 8-SOIC -40 to 85ELECTRICAL CHARACTERISTICS: V = ±5V (V = +10V) S SBoldface limits apply over the specified tempera ..
NTA4001N-NTA4001NT1-NTA4001NT1G
Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection
Electrical Characteristics (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Min Typ Max UnitOFF CHARACTERISTICSDrain−to−Source Breakdown Voltage V V = 0 V, I = 100 A 20 V(BR)DSS GS DZero Gate Voltage Drain Current I V = 0 V, V = 20 V 1.0 ADSS GS DSGate−to−Source Leakage Current I V = 0 V, V = ±10 V ±100 AGSS DS GSON CHARACTERISTICS (Note 2)Gate Threshold Voltage V V = 3 V, I = 100 A 0.5 1.0 1.5 VGS(TH) DS DDrain−to−Source On Resistance R V = 4.5 V, I = 10 mA 1.5 3.0DS(on) () GS D V = 2.5 V, I = 10 mA 2.2 3.5GS DForward Transconductance g V = 3 V, I = 10 mA 80 mSFS DS DCAPACITANCESInput Capacitance C 11.5ISSV = 5 V, f = 1 MHz,DSOutput Capacitance C 10 pFOSSV V = 0 V = 0 VGS GSReverse Transfer Capacitance C 3.5RSSSWITCHING CHARACTERISTICS (Note 3)Turn−On Delay Time t 13 nsd(ON)Rise Time t 15rV V = 4.5 V = 4.5 V, , V V = 5 V = 5 V,,GS GS DS DSI = 10 mA, R = 10 D GTurn−Off Delay Time t 98nsd(OFF)Fall Time t 60fDrain−Source Diode CharacteristicsForward Diode Voltage V V = 0 V, I = 10 mA 0.66 0.8 VSD GS SNOTES:2. Pulse Test: pulse width 300 s, duty cycle 2%.3. Switching characteristics are independent of operating junction temperatures.
