NST3904DXV6T1 ,General Purpose NPN Dual TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NST3904DXV6T1G , Dual General Purpose Transistor
NST3946DXV6T1G , Complementary General Purpose Transistor
NST489AMT1 ,High Current Surface Mount NPN Silicon Low VCE(sat) TransistorELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NSVA397 , 422.2MHz Specified Low Power Radio Station
NSVMUN5333DW1T1G , Dual Bias Resistor Transistors
OPA256C-1 , Self-Scanning Line Sensor
OPA2604 ,Dual FET-Input, Low Distortion OPERATIONAL AMPLIFIERMaximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITPow ..
OPA2604AP ,Dual FET-Input, Low Distortion Operational AmplifierSample & Support &Product Tools &TechnicalCommunityBuyFolder Documents SoftwareOPA2604SBOS006A–SEPT ..
OPA2604AU ,Dual FET-Input, Low Distortion Operational AmplifierMaximum Ratings.. 410.3 Power Dissipation.... 216.2 ESD Ratings ...... 411 Device and Documentation ..
OPA2604AUG4 ,Dual FET-Input, Low-Distortion Operational Amplifier 8-SOIC -40 to 85Block Diagram... 1012 Mechanical, Packaging, and Orderable7.3 Feature Description.... 10Information ..
OPA2604IDRQ1 ,Automotive Catalog Dual FET-Input Low-Distortion Operational Amplifier 8-SOIC -40 to 125
NST3904DXV6T1
General Purpose NPN Dual Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF CHARACTERISTICSCollector- Emitter Breakdown Voltage (Note 2) V Vdc(BR)CEO(I = 1.0 mAdc, I = 0) 40 -C BCollector- Base Breakdown Voltage V Vdc(BR)CBO(I = 10 Adc, I = 0) 60 -C EEmitter- Base Breakdown Voltage V Vdc(BR)EBO(I = 10 Adc, I = 0) 6.0 -E CBase Cutoff Current I nAdcBL(V = 30 Vdc, V = 3.0 Vdc) - 50CE EBCollector Cutoff Current I nAdcCEX(V = 30 Vdc, V = 3.0 Vdc) - 50CE EBON CHARACTERISTICS (Note 2)DC Current Gain h -FE(I = 0.1 mAdc, V = 1.0 Vdc) 40 -C CE(I = 1.0 mAdc, V = 1.0 Vdc) 70 -C CE(I = 10 mAdc, V = 1.0 Vdc) 100 300C CE(I = 50 mAdc, V = 1.0 Vdc) 60 -C CE(I = 100 mAdc, V = 1.0 Vdc) 30 -C CECollector- Emitter Saturation Voltage V VdcCE(sat)(I = 10 mAdc, I = 1.0 mAdc) - 0.2C B(I = 50 mAdc, I = 5.0 mAdc) - 0.3C BBase- Emitter Saturation Voltage V VdcBE(sat)(I = 10 mAdc, I = 1.0 mAdc) 0.65 0.85C B(I = 50 mAdc, I = 5.0 mAdc) - 0.95C BSMALL- SIGNAL CHARACTERISTICSCurrent- Gain - Bandwidth Product f MHzT(I = 10 mAdc, V = 20 Vdc, f = 100 MHz) 300 -C CEOutput Capacitance C pFobo(V = 5.0 Vdc, I = 0, f = 1.0 MHz)- 4.0CB EInput Capacitance C pFibo(V = 0.5 Vdc, I = 0, f = 1.0 MHz)- 8.0EB C2. Pulse Test: Pulse Width ≤ 300 μs; Duty Cycle ≤ 2.0%.