NSS35200CF8T1G ,High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
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OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Maximum Ratings.. 610.2 Layout Example....... 226.2 ESD Ratings........ 611 Device and Documentatio ..
OPA2376AIDGKTG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Features 3 DescriptionThe OPA376 family represents a new generation of1• Low Noise: 7.5 nV/√Hz at 1 ..
OPA2376AIDR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Sample & Support & ReferenceProduct Tools &TechnicalCommunityBuy DesignFolder Documents SoftwareOPA ..
OPA2376AIDRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Features... 18 Application and Implementation...... 172 Applications..... 18.1 Application Informat ..
OPA2377AIDGKR ,Low-Cost, Low Noise, 5MHz CMOS Operational Amplifier 8-VSSOP -40 to 125This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated cir ..
OPA2377AIDGKT ,Low-Cost, Low Noise, 5MHz CMOS Operational Amplifier 8-VSSOP -40 to 125ELECTRICAL CHARACTERISTICS: V = +2.2V to +5.5VSBoldface limits apply over the specified temperature ..
NSS35200CF8T1G
High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable Applications
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V Vdc(BR)CEO(I = −10 mAdc, I = 0) −35 −45 −C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = −0.1 mAdc, I = 0) −55 −65 −C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = −0.1 mAdc, I = 0) −5.0 −7.0 −E CCollector Cutoff Current I AdcCBO(V = −35 Vdc, I = 0) − −0.03 −0.1CB ECollector−Emitter Cutoff Current I AdcCES(V = −35 Vdc) − −0.03 −0.1CESEmitter Cutoff Current I AdcEBO(V = −6.0 Vdc) − −0.01 −0.1EBON CHARACTERISTICSDC Current Gain (Note 4) hFE(I = −1.0 A, V = −2.0 V) 100 200 −C CE(I = −1.5 A, V = −2.0 V) 100 200 400C CE(I = −2.0 A, V = −2.0 V) 100 200 −C CECollector−Emitter Saturation Voltage (Note 4) V VCE(sat)(I = −0.1 A, I = −0.010 A) − − −0.10C B(I = −1.0 A, I = −0.010 A) − − −0.15C B(I = −2.0 A, I = −0.02 A) − − −0.30C BBase−Emitter Saturation Voltage (Note 4) V VBE(sat)(I = −1.0 A, I = −0.01 A) − −0.68 −0.85C BBase−Emitter Turn−on Voltage (Note 4) V VBE(on)(I = −2.0 A, V = −3.0 V) − −0.81 −0.875C CECutoff Frequency f MHzT(I = −100 mA, V = −5.0 V, f = 100 MHz) 100 − −C CEInput Capacitance (V = −0.5 V, f = 1.0 MHz) Cibo − 600 650 pFEBOutput Capacitance (V = −3.0 V, f = 1.0 MHz) Cobo − 85 100 pFCBTurn−on Time (V = −10 V, I = −100 mA, I = −1 A, R = 3 ) t − 35 − nSCC B1 C L onTurn−off Time (V = −10 V, I = I = −100 mA, I = 1 A, R = 3 ) t − 225 − nSCC B1 B2 C L off4. Pulsed Condition: Pulse Width = 300 sec, Duty Cycle ≤ 2%
