NSS30201MR6T1G ,Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
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OPA2376AIDGKR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Electrical Characteristics...... 811.5 Trademarks..... 246.8 Typical Characteristics........ 1011.6 ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Block Diagram... 14Information..... 257.3 Feature Description.... 144 Revision HistoryNOTE: Page nu ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Maximum Ratings.. 610.2 Layout Example....... 226.2 ESD Ratings........ 611 Device and Documentatio ..
OPA2376AIDGKTG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Features 3 DescriptionThe OPA376 family represents a new generation of1• Low Noise: 7.5 nV/√Hz at 1 ..
OPA2376AIDR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Sample & Support & ReferenceProduct Tools &TechnicalCommunityBuy DesignFolder Documents SoftwareOPA ..
OPA2376AIDRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Features... 18 Application and Implementation...... 172 Applications..... 18.1 Application Informat ..
NSS30201MR6T1G
Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 Package
ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V V(BR)CEO(I = 10 mA, I = 0) 30−−C BCollector−Base Breakdown Voltage V V(BR)CBO(I = 0.1 mA, I = 0) 50−−C EEmitter−Base Breakdown Voltage V V(BR)EBO(I = 0.1 mA, I = 0) 5.0−−E CCollector Cutoff Current I ACBO(V = 30 V, I = 0)−− 0.1CB ECollector−Emitter Cutoff Current I ACES(V = 30 V)−− 0.1CESEmitter Cutoff Current I AEBO(V = 4.0 V)− 0.1EBON CHARACTERISTICSDC Current Gain (Note 4) hFE(I = 1.0 mA, V = 5.0 V) 300−−C CE(I = 0.5 A, V = 5.0 V) 300 500 900C CE(I = 1.0 A, V = 5.0 V) 200−−C CECollector−Emitter Saturation Voltage (Note 4) V VCE(sat)(I = 1.0 A, I = 100 mA)− 0.10 0.200C B(I = 0.5 A, I = 50 mA)− 0.06 0.125C B(I = 0.1 A, I = 1.0 mA)− 0.05 0.075C BBase−Emitter Saturation Voltage (Note 4) V VBE(sat)(I = 1.0 A, I = 0.1 A)−−C B1.1Base−Emitter Turn−on Voltage (Note 4) V VBE(on)(I = 1.0 A, V = 2.0 V)−− 1.1C CECutoff Frequency f MHzT(I = 100 mA, V = 5.0 V, f = 100 MHz 200 300−C CEOutput Capacitance (f = 1.0 MHz) C pFobo−− 154. Pulsed Condition: Pulse Width 300 sec, Duty Cycle 2%.
