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NSS30201MR6T1G from ON,ON Semiconductor

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NSS30201MR6T1G

Manufacturer: ON

Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 Package

Partnumber Manufacturer Quantity Availability
NSS30201MR6T1G ON 23900 In Stock

Description and Introduction

Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 Package # Introduction to the NSS30201MR6T1G Electronic Component  

The NSS30201MR6T1G is a high-performance, low-voltage, single P-channel MOSFET designed for power management applications. This component is optimized for efficiency in portable and battery-powered devices, offering low on-resistance and fast switching capabilities.  

With a compact SOT-23-3 package, the NSS30201MR6T1G is ideal for space-constrained designs while maintaining robust thermal performance. Its low threshold voltage makes it suitable for use in low-voltage systems, ensuring minimal power loss and improved energy efficiency.  

Key features include a drain-source voltage (VDS) rating of -20V and a continuous drain current (ID) of -3.1A, making it a reliable choice for load switching, power distribution, and DC-DC conversion circuits. Additionally, its fast switching speed enhances performance in high-frequency applications.  

Engineers often select the NSS30201MR6T1G for its balance of performance, size, and cost-effectiveness, making it a versatile solution for consumer electronics, industrial controls, and automotive systems. Its RoHS compliance ensures adherence to environmental standards, further broadening its applicability in modern electronic designs.  

This MOSFET is a dependable option for designers seeking efficient power management in compact, energy-sensitive applications.

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