NSS30100LT1G ,Low VCE(sat) Transistor, PNP, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30101LT1G ,30 V, 2 A, Low VCE(sat) NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30201MR6T1G ,Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NSS35200CF8T1G ,High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
NSS40200UW6T1G , 40 V, 4.0 A, Low VCE(sat) PNP Transistor
NSS40300MDR2G , Dual Matched 40 V, 6.0 A, Low VCE(sat) PNP Transistor
OPA2376AIDG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125 SBOS406G–JUNE 2007–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA376: DBV PackageOPA376 ..
OPA2376AIDGKR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Electrical Characteristics...... 811.5 Trademarks..... 246.8 Typical Characteristics........ 1011.6 ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Block Diagram... 14Information..... 257.3 Feature Description.... 144 Revision HistoryNOTE: Page nu ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Maximum Ratings.. 610.2 Layout Example....... 226.2 ESD Ratings........ 611 Device and Documentatio ..
OPA2376AIDGKTG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Features 3 DescriptionThe OPA376 family represents a new generation of1• Low Noise: 7.5 nV/√Hz at 1 ..
OPA2376AIDR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125Sample & Support & ReferenceProduct Tools &TechnicalCommunityBuy DesignFolder Documents SoftwareOPA ..
NSS30100LT1G
Low VCE(sat) Transistor, PNP, 30 V, 2.0 A, SOT-23 Package
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V Vdc(BR)CEO(I = −10 mAdc, I = 0)−30−C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = −0.1 mAdc, I = 0)−50−C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = −0.1 mAdc, I = 0)−5.0−E CCollector Cutoff Current IAdcCBO(V = −30 Vdc, I = 0)−−0.1CB ECollector−Emitter Cutoff Current I AdcCES(V = −30 Vdc)−−0.1CESEmitter Cutoff Current I AdcEBO(V = −4.0 Vdc)−−0.1EBON CHARACTERISTICSDC Current Gain (Note 4) (Figure 1) hFE(I = −1.0 mA, V = −2.0 V) 100−C CE(I = −500 mA, V = −2.0 V) 100 300C CE(I = −1.0 A, V = −2.0 V) 80−C CE(I = 2.0 A, V = −2.0 V) 40−C CECollector−Emitter Saturation Voltage (Note 4) (Figure 3) V VCE(sat)(I = −0.5 A, I = −0.05 A)−−0.25C B(I = −1.0 A, I = 0.1 A)−−0.30C B(I = −2.0 A, I = −0.2 A)−−0.65C BBase−Emitter Saturation Voltage (Note 4) (Figure 2) V VBE(sat)(I = −1.0 A, I = −0.1 A)−−1.2C BBase−Emitter Turn−on Voltage (Note 4) V VBE(on)(I = −1.0 A, V = −2.0 V)−−1.1C CECutoff Frequency f MHzT(I = −100 mA, V = −5.0 V, f = 100 MHz) 100−C CEOutput Capacitance (f = 1.0 MHz) Cobo− 15 pF4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
