NSS20300MR6T1G ,PNP TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
NSS30100LT1G ,Low VCE(sat) Transistor, PNP, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30101LT1G ,30 V, 2 A, Low VCE(sat) NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30201MR6T1G ,Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NSS35200CF8T1G ,High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
NSS40200UW6T1G , 40 V, 4.0 A, Low VCE(sat) PNP Transistor
OPA2374AIDR ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational AmplifierBlock Diagram... 15Information..... 274 Revision HistoryChanges from Revision E (May 2008) to Revis ..
OPA2374AIDRG4 ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational Amplifier 8-SOIC Features 3 DescriptionThe OPA373 and OPA374 families of operational1• Low Offset: 5 mV (Maximum)amp ..
OPA2376AIDG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-SOIC -40 to 125 SBOS406G–JUNE 2007–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA376: DBV PackageOPA376 ..
OPA2376AIDGKR ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Electrical Characteristics...... 811.5 Trademarks..... 246.8 Typical Characteristics........ 1011.6 ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Block Diagram... 14Information..... 257.3 Feature Description.... 144 Revision HistoryNOTE: Page nu ..
OPA2376AIDGKRG4 ,Precision, Low Noise, Low Quiescent Current Operational Amplifier 8-VSSOP -40 to 125Maximum Ratings.. 610.2 Layout Example....... 226.2 ESD Ratings........ 611 Device and Documentatio ..
NSS20300MR6T1G
PNP Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max UnitOFF CHARACTERISTICSCollector−Emitter Breakdown Voltage V Vdc(BR)CEO(I = −10 mAdc, I = 0) −20 −C BCollector−Base Breakdown Voltage V Vdc(BR)CBO(I = −0.1 mAdc, I = 0) −30 −C EEmitter−Base Breakdown Voltage V Vdc(BR)EBO(I = −0.1 mAdc, I = 0) −6.0 −E CCollector Cutoff Current I AdcCBO(V = −20 Vdc, I = 0) − −0.1CB ECollector−Emitter Cutoff Current I AdcCES(V = −20 Vdc) − −0.1CESEmitter Cutoff Current I AdcEBO(V = −6.0 Vdc) − −0.1EBON CHARACTERISTICS(1)DC Current Gain hFE(I = −1.0 A, V = −1.5 V) 100 −C CE(I = −1.5 A, V = −2.0 V) 100 400C CE(I = −2.0 A, V = −2.0 V) 100 −C CECollector−Emitter Saturation Voltage (Note 3) V VCE(sat)(I = −0.10 A, I = −0.010 A) − − −0.015C B(I = −1.0 A, I = −0.010 A) − − −0.145C B(I = −2.0 A, I = −0.02 A) − − −0.320C BBase−Emitter Saturation Voltage (Note 3) V VBE(sat)(I = −1A, I = −0.010 A) − − −0.85C BBase−Emitter Turn−on Voltage (Note 3) V VBE(on)(I = −2.0 A, V = −3.0 V) − − −0.875C CECutoff Frequency f MHzT(I = −100 mA, V = −5.0 V, f = 100 MHz) 100 − −C CEInput Capacitance (V = −0.5 V, f = 1.0 MHz) Cibo − 650 pFEBOutput Capacitance (V = −3.0 V, f = 1.0 MHz) Cobo − 100 pFCB3. Pulsed Condition: Pulse Width ≤ 300 sec, Duty Cycle ≤ 2%
