NSS12200WT1G ,Low VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NSS20300MR6T1G ,PNP TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
NSS30100LT1G ,Low VCE(sat) Transistor, PNP, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30101LT1G ,30 V, 2 A, Low VCE(sat) NPN TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Max UnitOFF ..
NSS30201MR6T1G ,Low VCE(sat) Transistor, NPN, 30 V, 2.0 A, SOT-23 PackageELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NSS35200CF8T1G ,High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor for Load Management in Portable ApplicationsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typical Max ..
OPA2373AIDGSR ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational AmplifierFeatures 3 DescriptionThe OPA373 and OPA374 families of operational1• Low Offset: 5 mV (Maximum)amp ..
OPA2373AIDRCR ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational Amplifier 10-VSON -40 to 125Block Diagram... 15Information..... 274 Revision HistoryChanges from Revision E (May 2008) to Revis ..
OPA2373AIDRCRG4 ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational Amplifier 10-VSON -40 to 125Maximum Ratings.. 711.1 Layout Guidelines.... 237.2 ESD Ratings........ 711.2 Layout Example....... ..
OPA2374AID ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational AmplifierFeatures... 18.4 Device Functional Modes.... 182 Applications..... 19 Application and Implementatio ..
OPA2374AIDCNR ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational AmplifierMaximum Ratings.. 711.1 Layout Guidelines.... 237.2 ESD Ratings........ 711.2 Layout Example....... ..
OPA2374AIDG4 ,Dual 6.5MHz, 585uA, Rail-to-Rail I/O CMOS Operational Amplifier 8-SOIC -40 to 125 SBOS279F–SEPTEMBER 2003–REVISED SEPTEMBER 20165 Device Comparison TablePACKAGE-PINNO. OFDEVICE SHU ..
NSS12200WT1G
Low VCE(sat) Transistor, PNP, 12 V, 2.0 A, SOT-363 Package
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollectorï Emitter Breakdown Voltage, (I = ï 10 mAdc, I = 0) Vï 12ï 15ï VdcC B (BR)CEOCollectorï Base Breakdown Voltage, (I = ï 0.1 mAdc, I = 0) Vï 12ï 25ï VdcC E (BR)CBOEmitterï Base Breakdown Voltage, (I = ï 0.1 mAdc, I = 0) Vï 5.0ï 7.0ï VdcE C (BR)EBOCollector Cutoff Current, (V = ï 12 Vdc, I = 0) Iïï 0.02ï 0.1 AdcCB E CBOCollectorï Emitter Cutoff Current, (V = ï 12 Vdc, I = 0) Iïï 0.03ï 0.1 AdcCES E CESEmitter Cutoff Current, (V = ï 5.0 Vdc, I = 0) Iïï 0.03ï 0.1AdcEB E EBOON CHARACTERISTICSDC Current Gain (Note 3) hFE(I = ï 0.5 A, V = ï 1.5 V) 100 180ïC CE(I = ï 0.8 A, V = ï 1.5 V) 100 165 300C CE(I = ï 1.0 A, V = ï 1.5 V) 100 160ïC CECollectorï Emitter Saturation Voltage (Note 3) V VCE(sat)(I = ï 0.5 A, I = ï 10 mA)ïï 0.10ï 0.160C B(I = ï 0.8 A, I = ï 16 mA)ïï 0.14ï 0.235C B(I = ï 1.0 A, I = ï 20 mA)ïï 0.17ï 0.290C BBaseï Emitter Saturation Voltage (Note 3) V VBE(sat)(I = ï 1.0 A, I = ï 20 mA)ïï 0.84ï 0.95C BBaseï Emitter Turnï on Voltage (Note 3) V VBE(on)(I = ï 1.0 A, V = ï 1.5 V)ïï 0.81ï 0.95C CECutoff Frequency f MHzT(I = ï 100 mA, V = ï 5.0 V, f = 100 MHz)ï 100ïC CEOutput Capacitance C pFobo(V = ï 1.5 V, f = 1.0 MHz)ï 50 65CB1. FRï 4, Minimum Pad, 1 oz Coverage.2. FRï 4, 1 Pad, 1 oz Coverage.3. Pulsed Condition: Pulse Width < 300 sec, Duty Cycle < 2%.
