NSL12AWT1 ,High Current Surface Mount PNP Silicon TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typical Max ..
NSL12AWT1 ,High Current Surface Mount PNP Silicon Transistor2NSL12AW0.5 0.50.40.42 A0.3 0.30.20.21 AI /I = 100C B800 mA0.1 0.1I = 100 mA 500 mACI /I = 10C B001 ..
NSQA12VAW5T2 ,Low Capacitance Quad Array for ESD ProtectionFeatures• ESD Protection: IEC61000−4−2: Level 4MILSTD 883C − Method 3015−6: Class 3• Four Separate ..
NSQA12VAW5T2G ,Low Capacitance Quad Array for ESD ProtectionELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ANSQA6V8AW5T2Characteristic Symbol Min ..
NSQA6V8AW5T2 ,Low Capacitance Quad TVS Array in SC-88AELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ANSQA6V8AW5T2Characteristic Symbol Min ..
NSQA6V8AW5T2G ,Low Capacitance Quad TVS Array in SC-88AFeatures• ESD Protection: IEC61000−4−2: Level 4MILSTD 883C − Method 3015−6: Class 3• Four Separate ..
OPA2345EA/250 ,Low Power, Single-Supply, Rail-To-Rail Operational Amplifiers MicroAmplifier(TM) SerSPECIFICATIONS: V = 2.7V to 5.5VSAt T = +25°C, R = 10kΩ connected to V /2 and V = V /2, unless othe ..
OPA2345UA ,Low Power, Single-Supply, Rail-To-Rail Operational Amplifiers--MicroAmplifier SeriesMAXIMUM RATINGSELECTROSTATICSupply Voltage, V+ to V- .... 7.5VDISCHARGE SENSITIVITY(2)Signal Input ..
OPA2347 ,Micropower Rail-To-Rail Operational Amplifierfeatures an* PORTABLE EQUIPMENTexcellent speed/power ratio with a bandwidth of 350kHz.* BATTERY-POW ..
OPA2347EA/250 ,WCSP-8 Micropower Rail-To-Rail Operational AmplifierELECTRICAL CHARACTERISTICS: V = 2.5V to 5.5VSBoldface limits apply over the specified temperature r ..
OPA2347EA/250 G4 ,WCSP-8 Micropower Rail-To-Rail Operational Amplifier 8-SOT-23 -55 to 125(1)ABSOLUTE
OPA2347EA/3K ,WCSP-8 Micropower Rail-To-Rail Operational AmplifierMAXIMUM RATINGSELECTROSTATICSupply Voltage, V+ to V– .... 7.5VDISCHARGE SENSITIVITY(2)Signal Input ..
NSL12AWT1
High Current Surface Mount PNP Silicon Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typical Max UnitOFF CHARACTERISTICSCollector–Emitter Breakdown Voltage V Vdc(BR)CEO(I = –10 mAdc, I = 0) –12 –15 –C BCollector–Base Breakdown Voltage V Vdc(BR)CBO(I = –0.1 mAdc, I = 0) –12 –25 –C EEmitter–Base Breakdown Voltage V Vdc(BR)EBO(I = –0.1 mAdc, I = 0) –5.0 –7.0 –E CCollector Cutoff Current I AdcCBO(V = –12 Vdc, I = 0) – –0.02 –0.1CB ECollector–Emitter Cutoff Current I AdcCES(V = –12 Vdc, I = 0) – –0.03 –0.1CES EEmitter Cutoff Current I AdcEBO(V = –5.0 Vdc, I = 0) – –0.03 –0.1CES EON CHARACTERISTICSDC Current Gain (Note 3) hFE(I = –0.5 A, V = –1.5 V) 100 180 –C CE(I = –0.8 A, V = –1.5 V) 100 165 300C CE(I = –1.0 A, V = –1.5 V) 100 160 –C CECollector–Emitter Saturation Voltage (Note 3) V VCE(sat)(I = –0.5 A, I = –10 mA) – –0.10 –0.160C B(I = –0.8 A, I = –16 mA) – –0.14 –0.235C B(I = –1.0 A, I = –20 mA) – –0.17 –0.290C BBase–Emitter Saturation Voltage (Note 3) V VBE(sat)(I = –1.0 A, I = –20 mA) – –0.84 –0.95C BBase–Emitter Turn–on Voltage (Note 3) V VBE(on)(I = –1.0 A, V = –1.5 V) – –0.81 –0.95C CECutoff Frequency f MHzT(I = –100 mA, V = –5.0 V, f = 100 MHz) – 100 –C CEOutput Capacitance C pFobo(V = –1.5 V, f = 1.0 MHz) – 50 65CB3. Pulsed Condition: Pulse Width < 300 sec, Duty Cycle < 2%
