NSB1706DMW5T1 ,Dual Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )A 1 2Characteristi ..
NSB4904DW1T1G ,Dual Bias Resistor TransistorTHERMAL CHARACTERISTICSCharacteristic(One Junction Heated) Symbol Max UnitTotal Device Dissipation ..
NSB4904DW1T1G ,Dual Bias Resistor TransistorELECTRICAL CHARACTERISTICS(T = 25°C unless otherwise noted, common for Q and Q , − minus sign for Q ..
NSB8JT ,Glass Passivated General Purpose Plastic Rectifier Forward Current 8.0ANSxT, NSFxT, NSBxTVishay Semiconductorsformerly General SemiconductorGlass Passivated General Purpo ..
NSB9435T1 ,High Current Bias Resistor TransistorELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristics Symbol Min Typ Max Uni ..
NSBA114EDXV6T1 , Dual Bias Resistor Transistors
OPA2330AIDRG4 ,1.8V, 35?A, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125Electrical Characteristics table... 9OLChanges from Revision E (February 2011) to Revision F Page• ..
OPA2333AID ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125Maximum Ratings.. 510.2 Layout Example....... 236.2 ESD Ratings........ 511 Device and Documentatio ..
OPA2333AIDG4 ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125 SBOS351E–MARCH 2006–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA333 DBV PackageOPA333 ..
OPA2333AIDGKR ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-VSSOP -40 to 125Electrical Characteristics....... 711.4 Community Resources...... 246.7 Typical Characteristics. 81 ..
OPA2333AIDGKRG4 ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-VSSOP -40 to 125Block Diagram... 1212 Mechanical, Packaging, and Orderable7.3 Feature Description.... 12Information ..
OPA2333AIDR ,1.8V, 17?A, 2 channels, microPower, Precision, Zero Drift CMOS Op Amp 8-SOIC -40 to 125 SBOS351E–MARCH 2006–REVISED DECEMBER 20155 Pin Configuration and FunctionsOPA333 DBV PackageOPA333 ..
NSB1706DMW5T1
Dual Bias Resistor Transistor
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted, common for Q and Q )A 1 2Characteristic Symbol Min Typ Max UnitOFF CHARACTERISTICSCollector-Base Cutoff Current Iïï 100 nAdcCBO(V = 50 V, I = 0)CB ECollector-Emitter Cutoff Current Iïï 500 nAdcCEO(V = 50 V, I = 0)CE BEmitter-Base Cutoff Current Iïï 0.18 mAdcEBO(V = 6.0 V, I = 0)EB CCollector-Base Breakdown Voltage V 50ïï Vdc(BR)CBO(I = 10 A, I = 0)C ECollector-Emitter Breakdown Voltage (Note 3) V 50ïï Vdc(BR)CEO(I = 2.0 mA, I = 0)C BON CHARACTERISTICS (Note 3)DC Current Gain h 80 200ïFE(V = 10 V, I = 5.0 mA)CE CCollector-Emitter Saturation Voltage Vïï 0.25 VdcCE(sat)(I = 10 mA, I = 1 mA)C BOutput Voltage (on) V VdcOL(V = 5.0 V, V = 2.5 V, R = 1.0 k)ïï 0.2CC B LOutput Voltage (off) V 4.9ïï VdcOH(V = 5.0 V, V = 0.25 V, R = 1.0 k)CC B LInput Resistor R1 3.3 4.7 6.1 kResistor Ratio R1/R2 0.055 0.1 0.185NOTE: New resistor combinations. Updated curves to follow in subsequent data sheets.3. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.30025020015010050 R = 833°C/WJA0ï 50 0 50 100 150T , AMBIENT TEMPERATURE (°C)AFigure 1. Derating Curve
