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NM93CS06EN-NM93CS06N-NM93CS46M8-NM93CS46N
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read
TL/D/10750
NM93CS06/CS46/CS56/CS66
(MICROWIRE
Bus
Interface)
256-/1024-/2048-/4096-Bit
Serial
EEPROM
with
Data
Protect
and
Sequential
Read
August1994
NM93CS06/CS46/CS56/CS66
(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit
Serial EEPROM with Data Protect and Sequential Read
General Description
The NM93CS06/CS46/CS56/CS66 devices are 256/
1024/2048/4096 bits, respectively,of CMOS non-volatile
electrically erasable memory divided into 16/64/128/
256 16-bit registers. Selected registers canbe protected
against data modificationby programmingthe Protect Reg-
ister withthe addressofthefirst registertobe protected
againstdata modification (allregisters greater than,orequal
to,the selected addressare then protected from further
change). Additionally,this addresscanbe ‘‘locked’’intothe
device, makingall future attemptsto change data impossi-
ble. These devicesare fabricated using National Semicon-
ductor floating-gate CMOS processfor high reliability, high
endurance andlow power consumption. The NM93CSXX
Familyis offeredinanSO packagefor small space consid-
erations.
The EEPROM interfacingis MICROWIRE compatible pro-
viding simple interfacingto standard microcontrollers and
microprocessors. Therearea totalof10 instructions,5
which operateonthe EEPROM memory,and5 which oper-
ateonthe Protect Register. The memory instructionsare
READ, WRITE, WRITE ALL, WRITE ENABLE,and WRITE
DISABLE. The Protect register instructionsare PRREAD,
PRWRITE, PRENABLE, PRCLEAR,and PRDISABLE.
Features Write protectionina user defined sectionof memory Sequential register read Typical active currentof400mAand standby currentofmANo erase required before write Reliable CMOS floating gate technology MICROWIRE compatible serialI/O Self timed write cycle Device status during programming mode40 year data retention Endurance:106 data changes 4.5Vto 5.5V operationinall modesof operation Packages available: 8-pinSO, 8-pinDIP
Block Diagram
TL/D/10750–1
TRI-STATEÉ isaregistered trademarkof National SemiconductorCorporation.
MICROWIRETMis atrademarkof National SemiconductorCorporation.
C1995National SemiconductorCorporation RRD-B30M75/PrintedinU.S.A.
