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25 “A
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I Typical active current 400 FA; Typical standby current
25 “A
I Reliable CMOS floa ..
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NM93CS06N ,(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential ReadNM93CS06/CS46/CS56/CS66(MICROWIREBusInterface)256-/1024-/2048-/4096-BitSerialEEPROMwithDataProtecta ..
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NM93C46-NM93C66
256-Bit Serial EEPROM (MICROWIRE)
TL/D/10751
NM93C06/C46/C56/C66
256-/1024-/2048-/4096-Bit
Serial
EEPROM
(MICROWIRE
Bus
Interface)
August 1996
NM93C06/C46/C56/C66
256-/1024-/2048-/4096-Bit Serial EEPROM
(MICROWIRETM Bus Interface)
General Description
The NM93C06/C46/C56/C66 devices are 256/1024/
2048/4096 bits, respectively,of CMOS non-volatile electri-
cally erasable memory dividedinto 16/64/128/256 16-bit
registers. Theyare fabricated using National Semiconduc-
tor’s floating-gate CMOS processfor high reliabilityandlow
power consumption. These memory devicesare availablein
bothSOand TSSOP packagesfor small space considera-
tions.
The EEPROM Interfacingis MICROWIRE compatiblefor
simple interfaceto standard microcontrollers and micro-
processors. Thereare7 instructions that control thesede-
vices: Read, Erase/Write Enable, Erase, EraseAll, Write,
WriteAll,and Erase/Write Disable. The ready/busy status availableontheDOpin during programming.
Features Device status during programming mode Typical active currentof200mA; Typical standby
currentof10mANo erase required before write Reliable CMOS floating gate technology 4.5Vto 5.5V operationinall modes MICROWIRE compatible serialI/O Self-timed programming cycle40 years data retention Endurance:106 data changes Packages available: 8-pinSO, 8-pin DIP, 8-pin TSSOP
Block Diagram
TL/D/10751–1
TRI-STATEÉ isaregistered trademarkof National SemiconductorCorporation.
MICROWIRETMis atrademarkof National SemiconductorCorporation.
C1996National SemiconductorCorporation RRD-B30M96/Printed inU.S.A. http://