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NM93C06LZEN-NM93C06LZN
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V)
TL/D/11778
NM93C06LZ/C46LZ/C56LZ/C66LZ
256-/1024-/2048-/4096-Bit
Serial
EEPROM
with
Zero
Power
and
Extended
Voltage
(2.7V
5.5V)
(MICROWIRE
Bus
Interface)
September 1996
NM93C06LZ/C46LZ/C56LZ/C66LZ
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2.7V to 5.5V)
(MICROWIRETM Bus Interface)
General Description
The NM93C06LZ/C46LZ/C56LZ/C66LZ devicesare 256/
1024/2048/4096 bits respectively,of CMOS non-volatile
electrically erasable memory divided into 16/64/128/256
16-bit registers. Theyare fabricated using National Semi-
conductor’s floating-gate CMOS processfor high reliability
andlow power consumption. These memory devicesare
availablein bothSOand TSSOP packagesfor small space
considerations.
The serial interface that operates these EEPROMsisMI-
CROWIRE compatiblefor simple interfaceto standardmi-
crocontrollers and microprocessors. Thereare7 instruc-
tionsthat control these devices: Read, Erase/Write Enable,
Erase, EraseAll, Write, WriteAll,and Erase/Write Disable.
The ready/busy statusis availableontheDOpinto indicate
the completionofa programming cycle.
Features Less than1.0mA standby current 2.7V–5.5V operationinall modes Typical active currentof100mA Direct write:no erase before program Reliable CMOS floating gate technology MICROWIRE compatible serialI/O Self-timed programming cycle Device status indication during programming mode40 years data retention Endurance:106 data changes Packages available: 8-pinSO, 8-pin DIP, 8-pin TSSOP
Block Diagram
TL/D/11778–1
TRI-STATEÉ isaregistered trademarkof National SemiconductorCorporation.
MICROWIRETMis atrademarkof National SemiconductorCorporation.
C1996National SemiconductorCorporation RRD-B30M96/Printed inU.S.A. http://
