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Home ›  NN17 > NM93C06EM8-NM93C06EN-NM93C06LEN-NM93C06LM8-NM93C06LN-NM93C06M8-NM93C06N-NM93CS06N,256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06EM8-NM93C06EN-NM93C06LEN-NM93C06LM8-NM93C06LN Fast Delivery,Good Price
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NM93C06NNS.N/a551avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06NFSCN/a4160avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06EM8NSN/a56avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06ENNSN/a1avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06LENNSN/a33avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
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NM93C06NNSN/a8615avai256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
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NM93CS06NFAIN/a8450avai(MICROWIRETM Bus Interface) 256-/1024-/2048-/4096-Bit Serial EEPROM with Data Protect and Sequential Read


NM93C06N ,256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)applications. This device is Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOPoffered in both S ..
NM93C06N ,256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)FeaturesNM93C06 is a 256-bit CMOS non-volatile EEPROM organized as  Wide V 2.7V - 5.5VCC16 x 16-bi ..
NM93C06N ,256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)features MICROWIRE interface Typical active current of 200µ Awhich is a 4-wire serial bus with chi ..
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NM93C06EM8-NM93C06EN-NM93C06LEN-NM93C06LM8-NM93C06LN-NM93C06M8-NM93C06N-NM93CS06N
256-Bit Serial CMOS EEPROM (MICROWIRE⑩ Synchronous Bus)
NM93C06 256-Bit Serial CMOS EEPROM TM (MICROWIRE Synchronous Bus) February 2000 NM93C06 256-Bit Serial CMOS EEPROM (MICROWIRE™ Synchronous Bus) General Description Features NM93C06 is a 256-bit CMOS non-volatile EEPROM organized as � Wide V 2.7V - 5.5V CC 16 x 16-bit array. This device features MICROWIRE interface � Typical active current of 200µA which is a 4-wire serial bus with chipselect (CS), clock (SK), data 10µA standby current typical input (DI) and data output (DO) signals. This interface is compat- 1µA standby current typical (L) ible to many of standard Microcontrollers and Microprocessors. 0.1µA standby current typical (LZ) There are 7 instructions implemented on the NM93C06 for various � No Erase instruction required before Write instruction Read, Write, Erase, and Write Enable/Disable operations. This � Self timed write cycle device is fabricated using Fairchild Semiconductor floating-gate CMOS process for high reliability, high endurance and low power � Device status during programming cycles consumption. � 40 year data retention “LZ” and “L” versions of NM93C06 offer very low standby current � Endurance: 1,000,000 data changes making them suitable for low power applications. This device is � Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP offered in both SO and TSSOP packages for small space consid- erations. Functional Diagram V CC CS INSTRUCTION SK DECODER CONTROL LOGIC AND CLOCK INSTRUCTION DI GENERATORS REGISTER HIGH VOLTAGE GENERATOR ADDRESS AND REGISTER PROGRAM TIMER DECODER EEPROM ARRAY 16 READ/WRITE AMPS V 16 SS DATA IN/OUT REGISTER 16 BITS DO DATA OUT BUFFER 1 © 2000 Fairchild Semiconductor International NM93C06 Rev. E
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