NM27C256V ,262,144-Bit (32K x 8) High Performance CMOS EPROMNM27C256262,144-Bit(32Kx8)HighPerformanceCMOSEPROMDecember1993NM27C256262,144-Bit(32Kx8)HighPerform ..
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NM27C256V150 , 256K-Bit (32K x 8) High Performance CMOS EPROMGeneral Descriptionwhich range in densities up to 4 Mb.The NM27C256 is a 256K Electrically Programm ..
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NM27C256Q-NM27C256V
262,144-Bit (32K x 8) High Performance CMOS EPROM
TL/D/10833
NM27C256
262,144-Bit
(32K
High
Performance
CMOS
EPROM
December 1993
NM27C256
262,144-Bit (32Kx 8) High Performance CMOS EPROM
General Description
The NM27C256isa 256K Electrically Programmable Read
Only Memory.Itis manufacturedin National’s latest CMOS
split gate EPROM technology which enablesitto operateat
speedsasfastas120ns access time overthefull operating
range.
The NM27C256 provides microprocessor-based systems
extensive storage capacityfor large portionsof operating
system and application software.Its 120ns access time
provideshigh speed operation withhigh-performance CPUs.
The NM27C256 offersa single chip solutionforthe code
storage requirementsof 100% firmware-based equipment.
Frequently-used software routines are quickly executed
from EPROM storage, greatly enhancing system utility.
The NM27C256,is configuredinthe standard EPROMpin-
out which providesan easyupgrade pathfor systems which
are currently using standard EPROMs.
The NM27C256is one memberofa high density EPROM
Family which rangein densitiesupto4Mb.
Features High performance CMOS120ns access time JEDEC standardpin configuration 28-pinDIP package 32-pin chip carrier Drop-in replacementfor 27C256or 27256 Manufacturer’s identification code
Block Diagram
TL/D/10833–1
TRI-STATEÉ isaregistered trademarkof National SemiconductorCorporation.
HPCTM isatrademarkofNational SemiconductorCorporation.
C1995National SemiconductorCorporation RRD-B30M65/PrintedinU.S.A.
