NLSF302MNR2 ,Quad 2-Input NOR GateELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)r fÎT = 25°C T = − 40 to 85°CA AÎÎSymbol Parameter ..
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NLSF3T125MNR2 ,Quad Bus BufferELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fÎÎÎÎÎ T = 25°CÎÎÎÎ T = ≤ 85°CÎÎÎÎÎ T ≤ 125°CÎÎA ..
NLSF3T126MNR2 , Quad Bus Buffer with 3−State Control Inputs
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NVB6412ANT4G , N-Channel Power MOSFET
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NLSF302MNR2
Quad 2-Input NOR Gate
ELECTRICAL CHARACTERISTICS (Input t = t = 3.0ns)r fÎT = 25°C T = − 40 to 85°CA AÎÎSymbol Parameter Test Conditions Min Typ Max Min Max UnitÎÎÎÎÎt , Maximum Propagation Delay, V = 3.3 ± 0.3 V C = 15 pF 5.6 7.9 1.0 9.5 nsPLH CC Lt Input A or B to Output Y C = 50 pF 8.1 11.4 1.0 13.0PHLLÎÎÎÎÎÎV = 5.0 ± 0.5 V C = 15 pF 3.6 5.5 1.0 6.5 CC LÎÎÎÎÎC = 50 pF 5.1 7.5 1.0 8.5LÎÎÎÎÎC Maximum Input Capacitance 4 10 10 pFinÎÎÎÎÎÎTypical @ 25°C, V = 5.0 VCC15C Power Dissipation Capacitance (Note 1) pFPD1. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.PDAverage operating current can be obtained by the equation: I = C V f + I /4 (per gate). C is used to determine the)CC(OPR PD CC in CC PD2no−load dynamic power consumption; P = C V f + I V .D PD CC in CC CCNOISE CHARACTERISTICS (Input t = t = 3.0 ns, C = 50 pF, V = 5.0V)r f L CCT = 25°CASymbol Characteristic Typ Max UnitV Quiet Output Maximum Dynamic V 0.3 0.8 VOLP OLV Quiet Output Minimum Dynamic V − 0.3 − 0.8 VOLV OLV Minimum High Level Dynamic Input Voltage 3.5 VIHDV Maximum Low Level Dynamic Input Voltage 1.5 VILDTEST POINTVCCA or BOUTPUT50%DEVICEGNDUNDERt tPLH PHL C *LTEST50% VYCC*Includes all probe and jig capacitanceFigure 3. Switching Waveforms Figure 4. Test CircuitINPUTFigure 5. Input Equivalent Circuit
