NLAST4599DFT2 ,Single SPDT Analog Switch Single Supply, TTL Level
NLAST4599DFT2 ,Single SPDT Analog Switch Single Supply, TTL LevelELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Max LimitV V -55 to 25C <85C <125 ..
NLAST4599DFT2G , Low Voltage Single Supply SPDT Analog Switch
NLAST4599DFT2G , Low Voltage Single Supply SPDT Analog Switch
NLAST4599DTT1G , Low Voltage Single Supply SPDT Analog Switch
NLAST4599DTT1G , Low Voltage Single Supply SPDT Analog Switch
NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHC5513T1G ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHD2102PT1 ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD2102PT1G ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™PremiumV R TYP I MAX• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin (BR)DSS DS( ..
NTHD3100CT1 , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NTHD3100CT1G , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NLAST4599DFT2
Single SPDT Analog Switch Single Supply, TTL Level
ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Max LimitV V -55 to 25C <85C <125CCC ISSymbol Parameter Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unitt Turn-On Time R = 300 C = 35 pF 2.5 2.0 5 23 28 5 30 5 30 nsON L L(Figures 12 and 13) (Figures 5 and 6) 3.0 2.0 5 16 21 5 25 5 254.5 3.0 2 11 16 2 20 2 205.5 3.0 2 9 14 2 20 2 20t Turn-Of f Time R = 300 C = 35 pF 2.5 2.0 1 7 12 1 15 1 15 nsOFF L L(Figures 12 and 13) (Figures 5 and 6) 3.0 2.0 1 5 10 1 15 1 154.5 3.0 1 4 9 1 12 1 125.5 3.0 1 3 8 1 12 1 12t Minimum V = 3.0 V (Figure 4) 2.5 2.0 1 12 1 1 nsBBM ISBreak Break- B Before efore- Mak Make e T Tiime me R R = 300 = 300 CC = = 35 pF 35 F 3.0 3.0 2 2.0 .0 1 1 11 11 1 1 1 1L L L L4.5 3.0 1 6 1 15.5 3.0 1 5 1 1*Typical Characteristics are at 25C.Typical @ 25, VCC = 5.0 VC Maximum Input Capacitance, Select Input 8 pFINC or C Analog I/O (switch off) 10NO NCC Common I/O (switch off) 10COMC Feedthrough (switch on) 20(ON)ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V TypicalCCSymbol Parameter Condition V 25°C UnitBW BW Maximum Maximum On On- -Ch Channel annel - -3dB 3dB Bandwidth Bandwidth or or V V = = 0 0 dB dBm m 30 3.0 170 170 MH MHz zIN INMinimum Minimum Frequency Response Frequency Response V V centered between V centered between V and GND and GND 4.5 45 200 200IN IN CC CC(Figure (Figure 10) 10) (Figure (Figure 7) 7) 55 5.5 200 200V V Maximum Feedthrou Maximum Feedthrough gh On Loss On Loss V V = = 0 0 dBm @ 100 kHz to 50 MHz dBm @ 100 kHz to 50 MHz 3.0 3.0 -2 2 dB dBONL ONL IN INV centered between V and GND 4.5 -2V centered between V and GND 4.5 2IN IN CC CC(Figure 7) 5.5 -2V V Of Offf-Channel Isolation Channel Isolation f = 100 kHz; V f = 100 kHz V = = 1 1 V RMS V RMS 3.0 3.0 -93 93 dB dBIISO SO IIS S(Figure (Figure 10) 10) V V centered centered between V between V and and GND GND 4.5 4.5 -93 93IN IN CC CC(Figure 7) 5.5 -93Q Q Charge Charge Injection Select Input to Injection Select In ut to V V V V GND, F GND, F = 20 kHz = 20 kHzIN IN = = CC CC tto o IIS SCommon I/O Common I/O tt = tt = 3 ns 3 ns 3.0 3.0 1.5 1.5 pC Cr r ff(Figure 15) (g ) R = 0 , C = 1000 pF 5.5 3.0IS IS L LQC Q = C * * Δ ΔV VL OUT(Figure (Figure 8) 8)THD Total Harmonic Distortion F = 20 Hz to 100 kHz, R = Rgen = 600 ,IS LTHD + Noise THD + Noise C C = 50 pF =50 pFL L(Figure 14) V = 5.0 V sine wave 5.5 0.1 %IS PP
