NLAST4051QSR ,Analog Multiplexer/ Demultiplexermaximum ratings. Translation is16 9provided in the device, the Address and Inhibit are standard TTL ..
NLAST4052DR2 ,Analog Multiplexer / Demultiplexermaximum ratings. Translation isprovided in the device, the Address and Inhibit pins are standard TT ..
NLAST4052QSR ,Analog Multiplexer / DemultiplexerMAXIMUM RATINGS (Note 1)ÎÎÎ Symbol Parameter ValueÎÎÎ UnitÎÎÎ V Negative DC Supply Voltage (Referen ..
NLAST44599DTR2 ,Dual DPDT Analog Switch,TTL LevelMAXIMUM RATINGSSymbol Parameter Value UnitV Positive DC Supply Voltage 0.5 to 7.0 VCCV Analog Inp ..
NLAST44599MNR2 ,Dual DPDT Analog Switch,TTL Leveldelays and low ON resistances while maintaining CMOS low−powerdissipation. This DPDT controls analo ..
NLAST4501 ,SPST Analog Switch Single Supply, TTL LevelMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHC5513T1G ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHD2102PT1 ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD2102PT1G ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™PremiumV R TYP I MAX• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin (BR)DSS DS( ..
NTHD3100CT1 , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NTHD3100CT1G , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NLAST4051DR2-NLAST4051DTR2-NLAST4051QSR
Analog Multiplexer/ Demultiplexer
MAXIMUM RATINGS (Note 1)ÎÎÎ Symbol Parameter ValueÎÎÎ UnitÎÎÎ V Negative DC Supply Voltage (Referenced to GND) –7.0 to 0.5ÎÎÎÎÎÎ VEEV Positive DC Supply Voltage (Note 2) (Referenced to GND) –0.5 to 7.0 VÎÎCC(Referenced to V ) –0.5 to 7.0EEÎÎV Analog Input Voltage V –0.5 to V 0.5 VIS EE CCÎÎV Digital Input Voltage (Referenced to GND) –0.5 to 7.0 VINÎÎI DC Current, Into or Out of Any Pin 50 mAÎÎT Storage Temperature Range –65 to 150 °CSTGÎÎT Lead Temperature, 1 mm from Case for 10 Seconds 260 °CLÎÎT Junction Temperature under Bias 150 °CJÎÎ Thermal Resistance SOIC 143 °C/WJATSSOP 164ÎQSOP 164ÎÎP Power Dissipation in Still Air, SOIC 500 mWDÎTSSOP 450QSOP 450ÎÎMSL Moisture Sensitivity Level 1ÎÎF Flammability Rating Oxygen Index: 30% – 35% UL 94 V–0 @ 0.125 inRÎÎV ESD Withstand Voltage Human Body Model (Note 3) 2000 VESDÎMachine Model (Note 4) 200Charged Device Model (Note 5) 1000ÎÎI Latch–Up Performance Above V and Below GND at 125°C (Note 6) 300 mALATCH–UP CCÎÎ1. Absolute maximum continuous ratings are those values beyond which damage to the device may occur. Extended exposure to theseconditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute maximum–ratedconditions is not implied.2. The absolute value of V |V | ≤ 7.0.CC EE3. Tested to EIA/JESD22–A114–A.4. Tested to EIA/JESD22–A115–A.5. Tested to JESD22–C101–A.6. Tested to EIA/JESD78.RECOMMENDED OPERATING CONDITIONSSymbol Parameter Min Max UnitÎÎV Negative DC Supply Voltage (Referenced to GND) –5.5 GND VEEÎÎÎÎV Positive DC Supply Voltage (Referenced to GND) 2.5 5.5 VCCÎÎ(Referenced to V ) 2.5 6.6EEÎÎÎÎV Analog Input Voltage V V VIS EE CCÎÎÎÎÎÎ VÎ Digital Input Voltage (Note 7) (Referenced to GND)ÎÎÎÎ 0ÎÎÎÎ 5.5ÎÎÎ VINT Operating Temperature Range, All Package Types –55 125 °CÎÎÎÎAt , t Input Rise/Fall Time V = 3.0 V 0.3 V 0 100 ns/VÎ r fÎÎ CCÎ(Channel Select or Enable Inputs) V = 5.0 V 0.5 V 0 20CCÎÎ7. Unused digital inputs may not be left open. All digital inputs must be tied to a high–logic voltage level or a low–logic input voltage level.
