NLASB3157DFT2G ,2:1 MultiplexerELECTRICAL CHARACTERISTICST = +25C T = −40C to +85CA AV VCC CC(V) Min Typ Max Min MaxSymbol Para ..
NLASB3157MTR2G , The NLASB3157 is an advanced CMOS analog switch fabricated with silicon gate CMOS technology
NLAST4051DR2 ,Analog Multiplexer/ DemultiplexerMAXIMUM RATINGS (Note 1)ÎÎÎ Symbol Parameter ValueÎÎÎ UnitÎÎÎ V Negative DC Supply Voltage (Referen ..
NLAST4051DTR2 ,Analog Multiplexer/ DemultiplexerELECTRICAL CHARACTERISTICS – Analog SectionÎÎ Guaranteed LimitÎÎV V V VCC CC EE EEÎÎÎÎÎÎ –55 to 25° ..
NLAST4051QSR ,Analog Multiplexer/ Demultiplexermaximum ratings. Translation is16 9provided in the device, the Address and Inhibit are standard TTL ..
NLAST4052DR2 ,Analog Multiplexer / Demultiplexermaximum ratings. Translation isprovided in the device, the Address and Inhibit pins are standard TT ..
NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHC5513T1G ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHD2102PT1 ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD2102PT1G ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™PremiumV R TYP I MAX• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin (BR)DSS DS( ..
NTHD3100CT1 , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NTHD3100CT1G , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NLASB3157DFT2G
2:1 Multiplexer
ELECTRICAL CHARACTERISTICST = +25C T = −40C to +85CA AV VCC CC(V) Min Typ Max Min MaxSymbol Parameter Test Conditions UnitV HIGH Level 1.65−1.95 0.75 V VIH CCInput Voltage 2.3−5.5 0.7 VCCV LOW Level 1.65−1.95 0.25 V VIL CCInput Voltage 2.3−5.5 0.3 VCCI Input Leakage Current 0 V 5.5 V 0−5.5 0.05 0.1 1 AIN INI OFF State Leakage 0 A, B V 1.65−5.5 0.05 0.1 1 AOFF CCCurrentR Switch On Resistance V = 0 V, I = 30 mA 4.5 3.0 7.0 ON IN O(Note 3) V = 2.4 V, I = −30 mA 5.0 12IN OV = 4.5 V, I = −30 mA 7.0 15IN OV = 0 V, I = 24 mA 3.0 4.0 9.0 IN OV = 3 V, I = −24 mA 10 20IN OV = 0 V, I = 8 mA 2.3 5.0 12 IN OV = 2.3 V, I = −8 mA 13 30IN OV = 0 V, I = 4 mA 1.65 6.5 20 IN OV = 1.65 V, I = −4 mA 17 50IN OI Quiescent Supply V = V or GND 5.5 1.0 10 ACC IN CCCurrentAll Channels ON or I = 0OUTOFFAnalog Signal Range V 0 V 0 V VCC CC CCR On Resistance I = −30 mA, 0 V 4.5 25 RANGE A BnOver Signal Range VCC(Note 3) (Note 7) I = −24 mA, 0 V 3.0 50A Bn VCCI = −8 mA, 0 V 2.3 100A Bn VCCI = −4 mA, 0 V 1.65 300A Bn VCCR On Resistance Match I = −30 mA, V = 3.15 4.5 0.15 ON A BnBetween Channels I = −24 mA, V = 2.1 3.0 0.2A Bn(Note 3) (Note 4) I = −8 mA, V = 1.6 2.3 0.5A Bn(Note 5) I = −4 mA, V = 1.15 1.65 0.5A BnR On Resistance I = −30 mA, 0 V 5.0 6.0 flat A BnFlatness (Note 3) VCC(Note 4) (Note 6) I = −24 mA, 0 V 3.3 12A Bn VCCI = −8 mA, 0 V 2.5 28A Bn VCCI = −4 mA, 0 V 1.8 125A Bn VCC3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lowerof the voltages on the two (A or B Ports).4. Parameter is characterized but not tested in production.5. R = R max − R min measured at identical V , temperature and voltage levels.ON ON ON CC6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.7. Guaranteed by Design.
