NLAS5123 ,Analog Switch, SPDT, 1 Ohm RONELECTRICAL CHARACTERISTICST = +25°C T = ï 40°C to +85°CA AVCC(V) Min Typ Max Min MaxSymbol Paramete ..
NLAS5223BLMNR2G , Ultra−Low 0.5 ohm Dual SPDT Analog Switch
NLAS7222AMTR2G , 3.3 V, Wide Bandwidth, 2− to −1−Port (DPDT) Switch with Enable
NLAS9431MTR2G , Low Voltage Single Supply Dual DPDT Analog Switch
NLAS9431MTR2G , Low Voltage Single Supply Dual DPDT Analog Switch
NLASB3157 ,SPDT Analog Switch
NTHC5513T1 ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHC5513T1G ,Power MOSFET 20 V, 3.1 A/-2.1A Complentary ChipFET™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTHD2102PT1 ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NTHD2102PT1G ,Trench Power MOSFET 8.0 V, 3.4 A Dual P-Channel ChipFet™PremiumV R TYP I MAX• Low Profile (<1.1 mm) Allows it to Fit Easily into Extremely Thin (BR)DSS DS( ..
NTHD3100CT1 , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NTHD3100CT1G , Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
NLAS5123
Analog Switch, SPDT, 1 Ohm RON
ELECTRICAL CHARACTERISTICST = +25°C T = ï 40°C to +85°CA AVCC(V) Min Typ Max Min MaxSymbol Parameter Test Conditions UnitV HIGH Level 2.7 2.0 VIHInput Voltage 4.5 2.4V LOW Level 2.7 0.6 VILInput Voltage 4.5 0.8I Input Leakage Current 0 V 5.5 V 0ï 5.5 ±0.1 ±1AIN INI OFF State Leakage 0 NO, NC, COM V 5.5ï 2.0 +2.0 ±20 nAOFF CCCurrent (Note 7)I ON State Leakage 0 NO, NC, COM V 5.5ï 4.0 +4.0 ±40 nAON CCCurrent (Note 7)R Switch On ResistanceI = 100 mA, 2.7 1.7 2.0 ON O(Note 2) V = 0 V to VIS CCI = 100 mA, 4.5 1.0 1.2OV = 0 V to VIS CCI Quiescent Supply V = V or GND, I = 0 5.5 0.5 1.0ACC IN CC OUTCurrentAll Channels ON or OFFAnalog Signal RangeR On Resistance Match I = 100 mA, 2.7 0.15 ON ABetween Channels V = 1.5 VIS(Notes 2, 3, 4) I = 100 mA, 4.5 0.12 0.15AV = 2.5 VISR On Resistance I = 100 mA, 2.7 0.4 flat AFlatness (Notes 2, 3, 5) V = 0 V to VIS CCI = 100 mA, 4.5 0.3 0.4AV = 0 V to VIS CC2. Measured by the voltage drop between NC/NO and COM pins at the indicated current through the switch. On Resistance is determined bythe lower of the voltages on the two (NO, NC, COM).3. Parameter is characterized but not tested in production.4. R = R max ï R min measured at identical V , temperature and voltage levels.ON ON ON CC5. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.6. Guaranteed by Design.7. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the OnResistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
