NLAS4684FCT1G ,Ultra-Low Resistance Dual SPDT Analog SwitchMAXIMUM RATINGSSymbol Parameter Value UnitV Positive DC Supply Voltage 0.5 to 7.0 VCCV Analog Inp ..
NLAS4684MNR2 ,Dual SPDT .5 Ohm Analog SwitchPrepared by: Fred ZlotnickON SemiconductorAPPLICATION NOTEINTRODUCTION user will likely demand ster ..
NLAS4684MNR2G ,Ultra-Low Resistance Dual SPDT Analog SwitchUltra−Low R of 0.5 , for the Normally Closed (NC) switch, andON0.8 for the Normally Opened switc ..
NLAS4684MR2 ,Dual SPDT .5 Ohm Analog Switchfeatures. Theis a dual analog switch with a typical R of 0.5 Ω. It isONcommuter riding the metro or ..
NLAS4684MR2G ,Ultra-Low Resistance Dual SPDT Analog SwitchNLAS4684Ultra-Low ResistanceDual SPDT Analog SwitchThe NLAS4684 is an advanced CMOS analog switch f ..
NLAS4685FCT1G , Ultra-Low Resistance Dual SPDT Analog Switch
NTGS3446T1 ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitSource 4Drain−to−Source V ..
NTGS3446T1G ,Power MOSFET 5.1 Amps, 20 Volts N-Channel TSOP-6• Higher Efficiency Extending Battery Life• Logic Level Gate DriveV R TYP I MAX• Diode Exhibits Hig ..
NTGS3455 ,MOSFET -3.5 Amps, -30 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3. & 4.)ACharacteristic Symbol ..
NTGS3455T1 ,MOSFET -3.5 Amps, -30 Volts2NTGS3455T120 20V = −10 VGS18T = −55°CJV = −9 VGSV = −6 VGS 1616V = −8 VGS14 T = 25°CJV = −7 VGSV = ..
NTGS3455T1G ,MOSFET -3.5 Amps, -30 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JRating Symbol Value UnitDrain−to−Source Voltage ..
NTGS4111P ,Power MOSFET -30 V, -4.7 A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Test Condition M ..
NLAS4684FCT1G-NLAS4684MNR2G-NLAS4684MR2G
Ultra-Low Resistance Dual SPDT Analog Switch
ELECTRICAL CHARACTERISTICS − Analog SectionGuaranteed Maximum Limit−55C to 25C 85C 125CMin Max Min Max Min MaxSymbol Parameter Condition V 10% UnitCCR (NC) NC “ON” Resistance V V 2.5 0.6 0.7 0.8 ON IN IL(Note 3)V = GND to V 3.0 0.5 0.5 0.5IS CCI I 100 mA 5.0 0.4 0.4 0.5INR (NO) NO “ON” Resistance V V 2.5 2.0 2.0 2.0 ON IN IH(Note 3)V = GND to V 3.0 0.8 0.8 1.0IS CCI I 100 mA 5.0 0.8 0.8 0.9INR NC_On−Resistance I = 100 mA 2.5 0.15 0.15 0.15 FLAT (NC) COMFlatness (Notes 3, 5)V = 0 to V 3.0 0.15 0.15 0.15IS CC5.0 0.15 0.15 0.15R NO_On−Resistance I = 100 mA 2.5 0.35 0.35 0.35 FLAT (NO) COMFlatness (Notes 3, 5)V = 0 to V 3.0 0.35 0.35 0.35IS CC5.0 0.35 0.35 0.35R On−Resistance Match V = 1.3 V; 2.5 0.18 0.18 0.18 ON ISBetween Channels I = 100 mACOM(Notes 3 and 4)V = 1.5 V; 3.0 0.06 0.06 0.06ISI = 100 mACOMV = 2.8 V; 5.0 0.06 0.06 0.06ISI = 100 mACOMI NC or NO Off V = V or V 5.5 −1 1 −10 10 −100 100 nANC(OFF) IN IL IHLeakage CurrentI V or V = 1.0NO(OFF) NO NC(Figure 13) (Note 3)V = 4.5 VCOMI COM ON V = V or V 5.5 −2 2 −20 20 −200 200 nACOM(ON) IN IL IHLeakage CurrentV 1.0 V or 4.5 V withNO(Figure 13) (Note 3)V floating orNCV 1.0 V or 4.5 V withNCV floatingNOV = 1.0 V or 4.5 VCOM3. Guaranteed by design. Resistance measurements do not include test circuit or package resistance.4. R R − R between NC1 and NC2 or between NO1 and NO2.ON = ON(MAX) ON(MIN)5. Flatness is defined as the difference between the maximum and minimum value of on−resistance as measured over the specified analogsignal ranges.
