NLAS4501 ,SPST Analog Switch3NLAS4501ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)LimitV VCC ..
NLAS4501DFT2 ,SPST Analog SwitchThe NLAS4501 is pin−for−pin compatible with the MAX4501. TheNLAS4501 can be used as a direct replac ..
NLAS4501DTT1 ,SPST Analog SwitchMaximum ratings applied to the device are individual stress limitvalues (not normal operating condi ..
NLAS4501DTT1G ,Single SPST Analog Switch3NLAS4501ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)LimitV VCC ..
NLAS4599 ,SPDT Analog SwitchAND8058/DTwo New Analog SwitchesSet Standards for SpaceEfficiencyPrepared by: Fred Zlotnick
NLAS4599DFT2 ,SPDT Analog SwitchON SemiconductorAPPLICATION NOTEINTRODUCTION breakdown greater than 7.0 V, low R , and excellent hi ..
NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NTGS3433T1 ,MOSFET -3.3 Amps, -12 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted.)JP−ChannelRating Symbol Value Unit12 5 6DRAINDrai ..
NTGS3433T1G , MOSFET -3.3 Amps, -12 Volts
NTGS3441 ,Power MOSFET 1 Amp, 20 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 4 & 5)ACharacteristic Symbol Mi ..
NTGS3441T1 ,Power MOSFET 1 Amp, 20 VoltsMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value Unit3Drain−to−Source Voltage ..
NLAS4501-NLAS4501DFT2-NLAS4501DTT1
SPST Analog Switch
3NLAS4501ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)LimitV VCC CC25°CSymbol Parameter Condition V UnitBW BW Maximum On Maximum On−Channel Channel −3dB Bandwidth or 3dB Bandwidth or V V = 0 0 d dBm Bm 3.0 3.0 190 190 MHz MHzIS ISMinimum Frequency Response 200V centered between V and GND 4.5IS IS CC CC220 220(Fi (Figures 6 6 and 14) d 14)5.5V V Maximum Feedthrough On Loss Maximum Feedthrough On Loss V V = 0 dBm @ 10 kHz 0 dBm @ 10 kHz 3.0 3.0 −2 2 dB dBONL ONL IS IS−2V centered between V and GND 4.5IS IS CC CC−2 2(Figure 6) (Fi 6)5.5V V Of Offf−Channel Isolation Channel Isolation 3.0 3.0 −93 93 dB dBf f = 100 kHz; V 100 kHz; V = 1 1 V RMS V RMSISO ISO IS ISV centered between V and GND 4.5IS IS CC CC(Figures (Fi 6 6 and 15) d 15)5.5Q Q Char Charge Injection ge Injection V V V V GND, F GND, F = 20 kHz = 20 kHz 3.0 3.0 1.5 1.5I IS S = = CC CC to to IS ISEnable Input to Common I/O Enable Input to Common I/O tt = t = t = 3 ns = 3 ns 5 5.5 .5 3.0 3.0 pC pCr r ffR R = 0 = 0 , C , C = 1000 pF = 1000 pFIS IS L LQ = C Q = C * V VL L OUT OUT(Figures 7 and 16)THD THD T Total Harmonic Distortion otal Harmonic Distortion 3.3 3.3 0.3 0.3 % %F F = 20 Hz to 1 MHz, R 20 Hz to 1 MHz, R = Rgen = 600 Rgen 600 , C , C = 50 pF 50 pFIS IS L L L LTHD + Noise V = 3.0 V sine wave 5.5 0.15IS IS PP PPV = 5.0 V sine waveIS IS PP PP(Figure 17)1.00E+051.00E+041.00E+031.00E+021.00E+01I1.00E+00 COM(ON)1.00E−011.00E−021.00E−031.00E−04 ICOM(OFF)1.00E−05I1.00E−06NO(OFF)1.00E−07−55 −35 −15 5 25 45 65 85 105 125 145TEMPERATURE (°C)Figure 3. Switch Leakage vs. Temperature
