NLAS4157DFT2G ,SPDT, 1 RON SwitchELECTRICAL CHARACTERISTICST = +25°C T = −40°C to +85°CA AV VCC CCSymbol Parameter Test Conditions ( ..
NLAS44599 ,Dual DPDT Analog SwitchMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NLAS44599DT ,Dual DPDT Analog SwitchMAXIMUM RATINGSSymbol Parameter Value UnitV Positive DC Supply Voltage 0.5 to 7.0 VCCV Analog Inp ..
NLAS44599DTR2 ,Dual DPDT Analog Switchand low ON resistances while maintaining CMOS low powerdissipation. This DPDT controls analog and d ..
NLAS44599DTR2G , Low Voltage Single Supply Dual DPDT Analog Switch
NLAS44599MNR2 ,Dual DPDT Analog Switch2AND8058/DXmitterALVDS Signals < 250 M bits/sec+100 ΩReceiverB–Switching Between 2 LVDS Lines 1/2 N ..
NTGD4161PT1G , Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6
NTGD4167C ,Complementary, 30V, +2.9/-2.2 A, TSOP-6 DualELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol N/P Test Conditions M ..
NTGS3130N ,Power MOSFET 20 V, 5.6 A, Single N-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)CCharacteristic Symbol Test Condition M ..
NTGS3130NT1G , Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6
NTGS3136P ,-20V, -5.8A, Single P-Channel, TSOP-6ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)JParameter Symbol Test Condition Mi ..
NTGS3433 ,MOSFET -3.3 Amps, -12 VoltsELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Notes 3 & 4)ACharacteristic Symbol Mi ..
NLAS4157DFT2G
SPDT, 1 RON Switch
ELECTRICAL CHARACTERISTICST = +25°C T = −40°C to +85°CA AV VCC CCSymbol Parameter Test Conditions (V) Min Typ Max Min Max UnitV HIGH Level 2.7 2.0 VIHInput Voltage 4.5 2.4V LOW Level 2.7 0.6 VILInput Voltage 4.5 0.8I Input Leakage Current 0 V 5.5 V 0−5.5 ±0.1 ±1 AIN INI OFF State Leakage 0 A, B V 5.5 −2.0 +2.0 ±20 nAOFF CCCurrent (Note 7)I ON State Leakage 0 A, B V 5.5 −4.0 +4.0 ±40 nAON CCCurrent (Note 7)R Switch On Resistance I = −100 mA, 2.7 2.0 4.0 4.3 ON O(Note 2) B or B = 3.5 V0 1I = −100 mA, 4.5 0.8 1.15 1.3OB or B = 1.5 V0 1I Quiescent Supply V = V or GND, I = 0 5.5 0.5 1.0 ACC IN CC OUTCurrentAll Channels ON or OFFAnalog Signal RangeR On Resistance Match I = −100 mA, 2.7 0.15 ON ABetween Channels B or B = 1.5 V0 1(Notes 2, 3, 4) I = −100 mA, 4.5 0.12 0.15AB or B = 3.5 V0 1R On Resistance I = −100 mA, 2.7 1.4 flat AFlatness (Notes 2, 3, 5) B or B = 0 V, 0.75 V, 1.5 V0 1I = −100 mA, 4.5 0.3 0.4AB or B = 0 V, 1.0 V, 2.0 V0 12. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lowerof the voltages on the two (A or B Ports).3. Parameter is characterized but not tested in production.4. DR = R max − R min measured at identical V , temperature and voltage levels.ON ON ON CC5. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.6. Guaranteed by Design.7. This parameter is guaranteed by design but not tested. The bus switch contributes no propagation delay other than the RC delay of the OnResistance of the switch and the 50 pF load capacitance, when driven by an ideal voltage source (zero output impedance).
