NLAS325 ,Dual SPST Analog SwitchMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NLAS325US ,Dual SPST Analog SwitchELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Maximum LimitV V 55C to 25C 85C ..
NLAS3699 ,Dual DPDT Ultra-Low RON SwitchFeatures16• Single Supply Operation1ÇÇQFN−161.65 to 4.7 V VCCNLASCASE 485AEÇÇFunction Directly from ..
NLAS3699BMN1R2G , Dual DPDT Ultra−Low RON Switch
NLAS3699BMN1R2G , Dual DPDT Ultra−Low RON Switch
NLAS3699BMN1R2G , Dual DPDT Ultra−Low RON Switch
NTF3055L108T3G ,N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain−to−Source Voltage ..
NTF3055L108T3LF ,N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NTF3055L108T3LFG ,N-Channel SOT-223FeaturesR = 120 mDS(on)• Pb−Free Packages are AvailableN−ChannelApplicationsD• Power Supplies• Con ..
NTF3055L175 ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NTF3055L175T1 ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CSRating Symbol Value UnitDrain−to−Source Voltage ..
NTF3055L175T1G ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-223NTF3055L175Preferred DevicePower MOSFET2.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
NLAS325-NLAS325US
Dual SPST Analog Switch
ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Maximum LimitV V 55C to 25C 85C 125CCC ISSymbol Parameter Test Conditions (V) (V) Min Typ* Max Min Max Min Max Unitt Turn–On Time R = 300 C = 35 pF 2.5 2.0 5 23 35 5 38 5 41 nsON L L(Figures 11 and 12) (Figures 4 and 5)3.0 2.0 5 16 24 5 27 5 304.5 3.0 2 11 16 2 19 2 225.5 3.0 2 9 14 2 17 2 20t Turn–Off Time R = 300 C = 35 pF 2.5 2.0 1 7 12 1 15 1 18 nsOFF L L(Figures 11 and 12) (Figures 4 and 5)3.0 2.0 1 5 10 1 13 1 164.5 3.0 1 4 6 1 9 1 125.5 3.0 1 3 5 1 8 1 11t Minimum Break–Before–Make V = 3.0 V (Figure 3) 2.5 2.0 1 12 1 1 nsBBM ISTimeR = 300 C = 35 pFL L 3.0 2.0 1 11 1 14.5 3.0 1 6 1 15.5 3.0 1 5 1 1*Typical Characteristics are at 25C.Typical @ 25, V = 5.0 VCCC Maximum Input Capacitance, Select Input 8 pFINC or C Analog I/O (switch off)NO NC 10C Common I/O (switch off)COM 10C Feedthrough (switch on)(ON)20ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V TypicalCCSymbol Parameter Condition V 25°C UnitBW Maximum On–Channel –3dB V = 0 dBm 3.0 145 MHzINBandwidth or Minimum FrequencyV centered between V and GND4.5 170IN CCResponse (Figure 10)(Figure 6)5.5 175V Maximum Feedthrough On Loss V = 0 dBm @ 100 kHz to 50 MHz 3.0 2 dBONL INV centered between V and GNDIN CC 4.5 2(Figure 6)5.5 2V Off–Channel Isolation (Figure 9) f = 100 kHz; V = 1 V RMS 3.0 93 dBISO ISV centered between V and GNDIN CC 4.5 93(Figure 6)5.5 93Q Charge Injection Select Input to V V GND, F = 20 kHz pCIN = CC to ISCommon I/O (Figure 14)t = t = 3 ns3.0 1.5r fR = 0 , C = 1000 pFIS L5.5 3.0Q = C * VL OUT(Figure 7)THD Total Harmonic Distortion THD + F = 20 Hz to 100 kHz, R = Rgen = 600 , C = 50 pF %IS L LNoise (Figure 13)V = 5.0 V sine waveIS PP 5.5 0.1VCT Channel–to–Channel Crosstalk f = 100 kHz; V = 1 V RMS dBISV centered between V and GNDIN CC 5.5 90(Figure 6)3.0 90
