NLAS324US ,Dual SPST Analog SwitchThe use of advanced 0.6 CMOS process, improves the RONresistance considerably compared to older h ..
NLAS325 ,Dual SPST Analog SwitchMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NLAS325US ,Dual SPST Analog SwitchELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Maximum LimitV V 55C to 25C 85C ..
NLAS3699 ,Dual DPDT Ultra-Low RON SwitchFeatures16• Single Supply Operation1ÇÇQFN−161.65 to 4.7 V VCCNLASCASE 485AEÇÇFunction Directly from ..
NLAS3699BMN1R2G , Dual DPDT Ultra−Low RON Switch
NLAS3699BMN1R2G , Dual DPDT Ultra−Low RON Switch
NTF3055L108T1G ,N-Channel SOT-223NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
NTF3055L108T3 ,N-Channel SOT-2232NTF3055L1086 6V = 3.4 VGS V > = 10 VDS5 5V = 3.5 VGSV = 4.5 VGSV = 3.2 VGS44V = 6 VGS3 3V = 3 VGST ..
NTF3055L108T3G ,N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain−to−Source Voltage ..
NTF3055L108T3LF ,N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NTF3055L108T3LFG ,N-Channel SOT-223FeaturesR = 120 mDS(on)• Pb−Free Packages are AvailableN−ChannelApplicationsD• Power Supplies• Con ..
NTF3055L175 ,Power MOSFET 2 Amps, 60 Volts, Logic Level N Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NLAS324-NLAS324US
Dual SPST Analog Switch
3NLAS324ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V LimitCCSymbol Parameter Condition V 25°C UnitBW BW Maximum On-Channel -3dB Bandwidth Maximum On Channel 3dB Bandwidth V V = = 0 0 dBm dBm 3.0 3.0 190 190 MHz MHzIS ISor Minimum Frequency Response or Minimum Frequency Res onse V V centered between V centered between V and GND and GND 4.5 4.5 200 200IS IS CC CC(Figures 6 and 14) 5.5 220V V Maximum Maximum Feedthrou Feedthrough gh On Loss On Loss V V = = 0 0 dBm @ 10 kHz dBm @ 10 kHz 3 3.0 .0 -2 2 dB dBO ONL NL IIS SV V centered centered between V between V and and GND GND 4.5 4.5 -2 2IS IS CC CC(Figure 6) 5.5 -2V V Of Offf-Channel Isolation Channel Isolation f f = 100 kHz; V = 100 kHz V = = 1 1 V RMS V RMS 3.0 3.0 -93 93 dB dBIISO SO IS ISV V centered centered between V between V and and GND GND 4.5 4.5IS IS CC CC(Figures 6 and 15) 5.5Q Q Charge Charge Injection Injection V V V V GND, F GND, F = 20 kHz = 20 kHz 3.0 3.0 1 1.5 .5IS IS = = CC CC tto o IS ISEnable Input to Common I/O Enable In ut to Common I/O tt = tt = 3 ns 3 ns 5.5 5.5 3.0 3.0 pC Cr r ffR = 0 , C = 1000 pFIS IS L LQC Q = C * * Δ ΔV VL OUT(Figures (Figures 7 and 16) 7 and 16)THD THD T Total Harmonic Distortion otal Harmonic Distortion F F = 20 Hz to 1 MHz, R = 20 Hz to 1 MHz, R = R = Rgen gen = 600 = 600 , C , C = 50 pF = 50 F 3 3.3 .3 0.3 0.3 % %IS IS L L L LTHD THD + Noise + Noise V V = 3.0 V 3.0 V sine wave sine wave 5.5 5.5 0.15 0.15IS IS PP PPV = 5.0 V sine waveIS IS PP PP(Fi (Figure 17) 17)1.00E+051.00E+041.00E+031.00E+021.00E+01I1.00E+00 COM(ON)1.00E-011.00E-021.00E-03I1.00E-04COM(OFF)1.00E-051.00E-06 INO(OFF)1.00E-07-55 -35 -15 5 25 45 65 85 105 125 145TEMPERATURE (°C)Figure 3. Switch Leakage vs. Temperature
