NLAS3158MNR2G ,Low Voltage Dual SPDT Analog Switch Dual 2:1 MultiplexerELECTRICAL CHARACTERISTICS (T = −40°C to +85°C)AT = +25C T = −40C to +85CA AV VCC CC(V) Min Typ ..
NLAS323 ,Dual SPST Analog Switch, Single SupplyMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NLAS323US ,Dual SPST Analog Switch, Single Supply3NLAS323ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V LimitCCSy ..
NLAS323USG ,Dual SPST Analog Switch, Low Voltage, Single SupplyMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NLAS324 ,Dual SPST Analog Switch3NLAS324ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V LimitCCSy ..
NLAS324US ,Dual SPST Analog SwitchThe use of advanced 0.6 CMOS process, improves the RONresistance considerably compared to older h ..
NTF3055-160 ,Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108 ,N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055L108T1G ,N-Channel SOT-223NTF3055L108Preferred DevicePower MOSFET3.0 A, 60 V, Logic LevelN−Channel SOT−223Designed for low vo ..
NTF3055L108T3 ,N-Channel SOT-2232NTF3055L1086 6V = 3.4 VGS V > = 10 VDS5 5V = 3.5 VGSV = 4.5 VGSV = 3.2 VGS44V = 6 VGS3 3V = 3 VGST ..
NTF3055L108T3G ,N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value Unit4Drain−to−Source Voltage ..
NTF3055L108T3LF ,N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NLAS3158MNR2G
Low Voltage Dual SPDT Analog Switch Dual 2:1 Multiplexer
ELECTRICAL CHARACTERISTICS (T = −40°C to +85°C)AT = +25C T = −40C to +85CA AV VCC CC(V) Min Typ Max Min MaxSymbol Parameter Test Conditions UnitV HIGH Level 1.65−1.95 0.75 V VIH CCInput Voltage 2.3−5.5 0.7 VCCV LOW Level 1.65−1.95 0.25 V VIL CCInput Voltage 2.3−5.5 0.3 VCCI Input Leakage Current 0 V 5.5 V 0−5.5 0.0 0.1 1 AIN IN5I OFF State Leakage 0 A, B V 1.65−5.5 0.0 0.1 1 AOFF CCCurrent 5R Switch On Resistance V = 0 V, I = 30 mA 4.5 3.0 6.0 6.0 ON IN O(Note 3) V = 2.4 V, I = −30 mA 5.0 8.0 8.0IN OV = 4.5 V, I = −30 mA 7.0 13 13IN OV = 0 V, I = 24 mA 3.0 4.0 8.0 8.0 IN OV = 3 V, I = −24 mA 10 19 19IN OV = 0 V, I = 8 mA 2.3 5.0 9.0 9.0 IN OV = 2.3 V, I = −8 mA 13 24 24IN OV = 0 V, I = 4 mA 1.65 6.5 12 12 IN OV = 1.65 V, I = −4 mA 17 39 39IN OI Quiescent Supply V = V or GND 5.5 1.0 10 ACC IN CCCurrentAll Channels ON or I = 0OUTOFFAnalog Signal Range V 0 V 0 V VCC CC CCR On Resistance I = −30 mA, 0 V V 4.5 25 RANGE A Bn CCOver Signal Range I = −24 mA, 0 V V 3.0 50A Bn CC(Note 3) (Note 7) I = −8 mA, 0 V V 2.3 100A Bn CCI = −4 mA, 0 V V 1.65 300A Bn CCR On Resistance Match I = −30 mA, V = 3.15 4.5 0.15 ON A BnBetween Channels I = −24 mA, V = 2.1 3.0 0.2A Bn(Note 3) (Note 4) I = −8 mA, V = 1.6 2.3 0.5A Bn(Note 5) I = −4 mA, V = 1.15 1.65 0.5A BnR On Resistance I = −30 mA, 0 V V 5.0 5.0 flat A Bn CCFlatness (Note 3) I = −24 mA, 0 V V 3.3 10A Bn CC(Note 4) (Note 6) I = −8 mA, 0 V V 2.5 24A Bn CCI = −4 mA, 0 V V 1.8 110A Bn CC3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lowerof the voltages on the two (A or B Ports).4. Parameter is characterized but not tested in production.5. R = R max − R min measured at identical V , temperature and voltage levels.ON ON ON CC6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.7. Guaranteed by Design.
