NLAS1053 ,2:1 Mux/Demux Analog SwitchesELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Max LimitV 55 to 25C 85C 125 ..
NLAS1053USG , 2:1 Mux/Demux Analog Switches
NLAS2066US ,Dual SPST Analog Switch, OVT Inputsfeatures notAdding an additional connector adds cost and takes upyet on the market. The USB port of ..
NLAS2066USG ,Dual SPST Analog Switch, OVT Inputsfeatures of theUSB v. 1.1 specification. There are three speeds for USB v.cell phone, the socket ma ..
NLAS3158MNR2G ,Low Voltage Dual SPDT Analog Switch Dual 2:1 MultiplexerELECTRICAL CHARACTERISTICS (T = −40°C to +85°C)AT = +25C T = −40C to +85CA AV VCC CC(V) Min Typ ..
NLAS323 ,Dual SPST Analog Switch, Single SupplyMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NTF2955T1 ,Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-2233−I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (Ω)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) D ..
NTF2955T1G ,Power MOSFET -60 V, 2.4 A, Single P-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)JParameter Symbol Value UnitDrain−to−Source Voltag ..
NTF3055-100 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223NTF3055-100Preferred DevicePower MOSFET3.0 Amps, 60 VoltsN−Channel SOT−223Designed for low voltage, ..
NTF3055-100T1 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted)CRating Symbol Value UnitMARKINGDIAGRAM4Drain−to−S ..
NTF3055-100T3 ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)ACharacteristic Symbol Min Typ Max Unit ..
NTF3055-100T3G ,Power MOSFET 3.0 Amps, 60 Volts N-Channel SOT-2233I DRAIN CURRENT (AMPS)R DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) R DRAIN−TO−SOURCE RESISTANCE ()DS ..
NLAS1053
2:1 Mux/Demux Analog Switches
ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)r fGuaranteed Max LimitV 55 to 25C 85C 125CCCSymbol Parameter Test Conditions (V) Min Typ* Max Min Max Min Max Unitt Turn–On Time R = 300 C = 35 pF 2.5 2 7 12 2 15 2 15 nsON L L(Figures 12 and 13) (Figures 4 and 5) 3.0 2 5 10 2 15 2 15INH to Output 4.5 1 4 9 1 12 1 125.5 1 3 8 1 12 1 12t Turn–Off Time R = 300 C = 35 pF 2.5 2 7 12 2 15 2 15 nsOFF L L(Figures 12 and 13) (Figures 4 and 5) 3.0 2 5 10 2 15 2 15INH to Output 4.5 1 4 9 1 12 1 125.5 1 3 8 1 12 1 12t Transition Time (Channel R = 300 C = 35 pF 2.5 5 18 28 5 30 5 30 nstrans L LSelection Time) (Figures and ) 3.0 5 13 21 5 25 5 25(Figure ) 4.5 2 12 16 2 20 2 20Select to Output 5.5 2 9 14 2 20 2 20t Minimum V = 3.0 V (Figure 3) 2.5 1 12 1 1 nsBBM ISBreak Break–Before–Mak Before Make e T Tiime me R R = 300 = 300 C C = 35 pF = 35 F 3 3.0 .0 1 1 11 11 1 1 1 1L L L L4.5 1 6 1 15.5 1 5 1 1*Typical Characteristics are at 25C.Typical @ 25, VCC = 5.0 VC Maximum Input Capacitance, Select/INH Input 8 pFINC or C Analog I/O (switch off) 10NO NCC Common I/O (switch off) 10COMC Feedthrough (switch on) 20(ON)ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)V TypicalCCSymbol Parameter Condition V 25°C UnitBW BW M Maximum aximum O On n– –Channel Channel – –3dB 3dB B Bandwidth andwidth or or V V = =00 dB dBm m 330 .0 170 170 MH MHz zIN INMinimum Minimum Frequency Response Frequency Response V V centered between V centered between V and GND and GND 45 4.5 200 200IN IN CC CC(Figure 10) (Figure 10) (Figure (Figure 7) 7) 5.5 55 200 200V V Maximum Maximum Feedthrou Feedthrough gh On Loss On Loss V V = = 00 dBm @ 100 kHz to 50 MHz dBm @ 100 kHz to 50 MHz 3 3.0 .0 - 3 3 dB dBONL ONL IN INV V centered between V centered between V and GND and GND 4.5 4.5 - 3 3IN IN CC CC(Figure 7) 5.5 - 3V V Of Off–Channel Isolation f Channel Isolation f f = 100 kHz; V = 100 kHz V = = 11 V RMS V RMS 3.0 3.0 - 93 93 dB dBISO ISO IS IS(Figure (Figure 10) 10) V V centered between V centered between V and GND and GND 4.5 4.5 - 93 93IN IN CC CC(Figure 7) 5.5 - 93Q Q Charge Charge In Injection jection Select Input to Select In ut to V V V V GND, F GND, F = 20 kHz = 20 kHzIN IN = = CC CC to to IS ISCommon I/O Common I/O tt = tt = 3 ns 3 ns 3.0 3.0 1.5 1.5 pC Cr r ff(Figure 15) (g ) R = 0 , C = 1000 pF 5.5 3.0IS IS L LQ = C QC * * Δ ΔV VL OUT(Figure 8) (Figure 8)THD Total Harmonic Distortion F = 20 Hz to 100 kHz, R = Rgen = 600 ,IS LTHD THD + Noise + Noise C C = 50 pF =50 pFL L(Figure 14) V = 5.0 V sine wave 5.5 0.1 %IS PP
