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NL37WZ16ONN/a3120avaiTriple Buffer
NL37WZ16USONSEMIN/a45000avaiTriple Buffer


NL37WZ16US ,Triple BufferMaximum Ratings are those values beyond which damage to the device may occur. Exposure to these con ..
NL37WZ16USG , Triple Buffer
NL37WZ16USG , Triple Buffer
NL37WZ17 ,Triple Non Inverting Schmitt Trigger BufferELECTRICAL CHARACTERISTICST = 25C 40C  T  85CA AV VCC CCMin Typ Max Min MaxSymbol Parameter C ..
NL37WZ17US ,Triple Non Inverting Schmitt Trigger Bufferchanging input signals into sharply defined, jitter-free output signals.In addition, it has a great ..
NL453232T-100J , For General Applications SMD
NTD110N02R ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NTD110N02R-001 ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKMaximum ratings applied to the device are individual stress limit values (not Gate Source1 2 3norma ..
NTD110N02R-001G ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)JRating Symbol Value UnitDrain−to−Source Voltage V ..
NTD110N02RG ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAK3R , DRAIN−TO−SOURCE RESISTANCE R , DRAIN−TO−SOURCE RESISTANCE (Ω) I , DRAIN CURRENT (AMPS)DS(on) D ..
NTD110N02RT4G ,Power MOSFET 110 Amps, 24 volts, N-channel, DPAK2NTD110N02R175 21010 V5 VT = 25°CJ V ≥ 10 VDS8 V150 1804.5 V6 V125 1504.2 V4 V100 1203.8 V75 903.6 ..
NTD12N10G , Power MOSFET 12 Amps, 100 Volts


NL37WZ16-NL37WZ16US
Triple Buffer
ELECTRICAL CHARACTERISTICS t = t = 2.5 ns; C = 50 pF; R = 500 ΩÎÎÎÎÎ R F L LT = 25°C 40°C ≤ T ≤ 85°CÎÎA AMin Typ Max Min MaxÎÎÎÎSymbol Parameter Condition V (V) UnitCCt Propagation Delay gy R = 1 M C = 15 pF 1.8  0.15 1.8 6.0 7.9 1.8 8.8 nsPLH PLH L Lt (Fi (Figure 3 and 4) 3 d 4)PHLR = 1 M C = 15 pF 2.5  0.2 1.0 3.0 5.2 1.0 5.8L LÎÎÎÎÎÎ R = 1 M C = 15 pFÎÎÎÎ 3.3  0.3ÎÎÎ 0.8ÎÎÎ 2.3ÎÎÎ 3.6ÎÎÎ 0.8ÎÎÎÎ 4.0Î L LÎR = 500  C = 50 pF 1.2 3.0 4.6 1.2 5.1L LR = 1 M C = 15 pF 0.5 1..8 2.9 0.5 3.2ÎÎÎÎÎÎ 5.0  0.5ÎL LR = 500  C = 50 pF 0.8 2.4 3.8 0.8 4.2ÎÎÎÎÎ L LÎÎCAPACITIVE CHARACTERISTICSSymbol Parameter Condition Typical UnitC Input Capacitance V = 5.5 V, V = 0 V or V 7.0 pFIN CC I CCC Power Dissipation Capacitance (Note 7) 10 MHz, V = 3.3 V, V = 0 V or V 9 pFPD CC I CC10 MHz, V = 5.5 V, V = 0 V or V 11CC I CC7. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.PDAverage operating current can be obtained by the equation: I = C  V  f  I . C is used to determine the no−load dynamicCC(OPR) PD CC in CC PD2power consumption; P = C  V  f  I  V .D PD CC in CC CC
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