NIF5002NT1G ,Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JParameter Symbol Test Condition Min Ty ..
NIF62514 ,Self-protected FET, Current and Temp Limit, 42V clamp, ESD, SOT-223ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NIS5112D2R2G , Electronic Fuse
NIS5132 ,3.6A 12V RESETTABLE ELECTRONIC FUSEELECTRICAL CHARACTERISTICS (Unless otherwise noted: V = 12 V, C = 100 F, dv/dt pin open, R = 10 , ..
NIS5132MN1TXG , 12 Volt Electronic Fuse
NJ88C30 , VHF SYNTHESISER
NLFC453232T-100K , For Power Line SMD
NLFC453232T-101K , For Power Line SMD
NLFC453232T-151K , For Power Line SMD
NLFC453232T-151K , For Power Line SMD
NLFC453232T-1R0M , For Power Line SMD
NLFC453232T-1R0M , For Power Line SMD
NIF5002N-NIF5002NT1G
Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223
NIF5002N
Preferred DeviceSelf-Protected FET
with T emperature and
Current Limit
42 V, 2.0 A, Single N−Channel, SOT−223HDPlus devices are an advanced series of power MOSFETs
which utilize ON Semiconductors latest MOSFET technology process
to achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
Applications Lighting Solenoids Small Motors
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
THERMAL RESISTANCE RATINGS
