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NID9N05CLONN/a1361avaiPower MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
NID9N05CLT4ONN/a1927avaiPower MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
NID9N05CLT4GONN/a32500avaiPower MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package


NID9N05CLT4G ,Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
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NID9N05CL-NID9N05CLT4-NID9N05CLT4G
Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package
NID9N05CL
Power MOSFET
9.0 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
in a DPAK Package
Benefits
High Energy Capability for Inductive Loads Low Switching Noise Generation
Features
Diode Clamp Between Gate and Source ESD Protection − HBM 5000 V Active Over−V oltage Gate to Drain Clamp Scalable to Lower or Higher RDS(on) Internal Series Gate Resistance
Applications
Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected. When surface mounted to an FR4 board using 1″ pad size, (Cu area 1.127 in2) When surface mounted to an FR4 board using minimum recommended pad
size, (Cu area 0.412 in2)
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