NID5001NT4 ,Self-protected SmartDiscrete, 42V clamp, Temp & Current Limit, ESD, DPAKMAXIMUM RATINGS (T = 25°C unless otherwise noted)J DIAGRAMRating Symbol Value Unit1YWWDPAKDrain−to− ..
NID5001NT4G ,Self-protected SmartDiscrete, 42V clamp, Temp & Current Limit, ESD, DPAK2NID5001NTYPICAL PERFORMANCE CURVES28284 V V ≥ 10 VV = 10 V to 4.2 VDSGS3.8 V24243.6 V2020T = 25°CJ ..
NID9N05CL ,Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK Package3NID9N05CL1818V = 10 V 6 VGS16 T = 25°C 16 T = −55°CJ J8 V14 146.5 VT = 25°C5 V T = 100°CJ J12 124. ..
NID9N05CLT4 ,Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NID9N05CLT4G ,Power MOSFET 9 A, 52 V, N-Channel, Logic Level, Clamped MOSFET w/ESD Protection in a DPAK PackageELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)JCharacteristic Symbol Min Typ Max Unit ..
NIF5002N ,Self-Protected Fet w/ Temperature and Current Limit 42 V 2.0 A Single N Channel SOT-223MAXIMUM RATINGS (T = 25°C unless otherwise noted) SOT−223J4GATECASE 318ERating Symbol Value Unit2St ..
NLFC453232T-100K , For Power Line SMD
NLFC453232T-100K , For Power Line SMD
NLFC453232T-101K , For Power Line SMD
NLFC453232T-151K , For Power Line SMD
NLFC453232T-151K , For Power Line SMD
NLFC453232T-1R0M , For Power Line SMD
NID5001N-NID5001NT4-NID5001NT4G
Self-protected SmartDiscrete, 42V clamp, Temp & Current Limit, ESD, DPAK
NID5001N
Preferred DeviceSelf-protected FET
with T emperature and
Current Limit
HDPlus devices are an advanced series of power MOSFETs which
utilize ON Semicondutor’s latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection
MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Minimum FR4 PCB, steady state. Mounted onto a 2″ square FR4 board (1″ square, 2 oz. Cu 0.06″ thick
single−sided, t = steady state).
