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NGB8202NT4ONN/a1000avaiIgnition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK


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NGB8202NT4
Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAK
NGB8202N
Ignition IGBT
20 A, 400 V , N−Channel D2 PAK

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for Coil−on−Plug and Driver−on−Coil Applications Gate−Emitter ESD Protection Temperature Compensated Gate−Collector V oltage Clamp Limits
Stress Applied to Load Integrated ESD Diode Protection Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices Low Saturation V oltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Maximum ratings are those values beyond which device damage can occur.Maximum ratings applied to the device are individual stress limit values (notnormal operating conditions) and are not valid simultaneously. If these limits areexceeded, device functional operation is not implied, damage may occur andreliability may be affected.
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