NGB15N41CLT4 ,Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max)MAXIMUM RATINGS (T = 25°C unless otherwise noted)J24 D PAKRating Symbol Value UnitCASE 418B1 2Colle ..
NGB8202NT4 ,Ignition IGBT 20 A, 400 V, N-Channel D<sup>2</sup>PAKELECTRICAL CHARACTERISTICSCharacteristic Symbol Test Conditions Temperature Min Typ Max UnitON CHAR ..
NGB8206N ,Ignition IGBT, N-Channel, 20 A, 350 V, D2PAKELECTRICAL CHARACTERISTICSCharacteristic Symbol Test Conditions Temperature Min Typ Max UnitOFF CHA ..
NGB8206NTF4G , Ignition IGBT
NGD15N41CLT4 ,Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max)ELECTRICAL CHARACTERISTICS (continued)Characteristic Symbol Test Conditions Temperature Min Typ Max ..
NGP15N41CL ,Ignition IGBT 15 Amps, 410 VoltsELECTRICAL CHARACTERISTICSCharacteristic Symbol Test Conditions Temperature Min Typ Max UnitOFF CHA ..
NLCV25T-4R7M , Inductors for Decoupling Circuits
NLCV25T-4R7M-PF , Inductors for Decoupling Circuits Wound/For Current NLCV/NLC series
NLCV25T-6R8M-PF , Inductors for Decoupling Circuits Wound/For Current NLCV/NLC series
NLCV25T-6R8M-PF , Inductors for Decoupling Circuits Wound/For Current NLCV/NLC series
NLCV32T-101K , Inductors for Decoupling Circuits
NLCV32T-1R0M-PF , SMD Inductors For Power Line
NGB15N41CLT4-NGD15N41CLT4-NGP15N41CL
Ignition IGBT DPAK 15 Amps, 410 Volts, 2.1 V(max)
NGD15N41CLT4,
NGB15N41CLT4,
NGP15N41CL
Preferred Device Ignition IGBT
15 Amps, 410 Volts
N−Channel DPAK, D2 PAK and TO−220This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Over−Voltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required. Ideal for Coil−on−Plug Applications DPAK Package Offers Smaller Footprint and Increased Board Space Gate−Emitter ESD Protection Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
