NE68939-T1 ,NPN SILICON EPITAXIAL TRANSISTORapplications. The device is designed to op- 4) Emittererate from a 3.6 V supply, and deliver over ..
NE699M01-T1 ,NPN epitaxial silicon transistor for microwave high-gain amplification.FEATURES OUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE M01• HIGH fT:16 GHz TYP at 2 V, 20 mATOP ..
NE70083 ,80 GHz, low noise Ku-K band GaAs MESFETapplications.
2.8 dB at 12 GHz The device is available as a chip (NE21800), and in a rugged
. HIG ..
NE71000 ,90 GHz, low noise Ku-K band GaAs MESFETapplications.
Several versions of NE71083 and NE70184 are available.
Noise figure and gain of t ..
NE7108408 ,90 GHz, low noise Ku-K band GaAs MESFET_ u.
N E C/ CALIFORNIA ISE I) I euavum 0001.527 i? I
(8)
NEC LOW NOISE NE710
' Ku-K BAND GaAs ..
NE721S01-T1 ,GENERAL PURPOSE L TO X-BAND GaAs MESFETFEATURES OUTLINE DIMENSIONS (Units in mm)• HIGH POWER GAIN:7 dB TYP at 12 GHzPACKAGE OUTLINE S01• H ..
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD
NE68939-T1
