NE663M04-T2 ,NPN silicon high frequency transistor.FEATURES• HIGH GAIN BANDWIDTH: fT = 15 GHz2• HIGH POWER GAIN: IS21EI = 11 dB TYP at 2 GHz• LOW NOIS ..
NE68119-T1 ,NECs NPN SILICON HIGH FREQUENCY TRANSISTORapplications up to 4 GHz. The NE681 die is also18 (SOT 343 STYLE) SUPER MINI MOLD)available in six ..
NE68519 ,NONLINEAR MODEL
NE68519-T1 ,SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTORFEATURES• LOW COST• SMALL AND ULTRA SMALL SIZE PACKAGES• LOW VOLTAGE/LOW CURRENT OPERATION• HIGH GA ..
NE68939-T1 ,NPN SILICON EPITAXIAL TRANSISTORapplications. The device is designed to op- 4) Emittererate from a 3.6 V supply, and deliver over ..
NE699M01-T1 ,NPN epitaxial silicon transistor for microwave high-gain amplification.FEATURES OUTLINE DIMENSIONS (Units in mm)PACKAGE OUTLINE M01• HIGH fT:16 GHz TYP at 2 V, 20 mATOP ..
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD
NE663M04-T2
