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NE651R479A-T1 |NE651R479AT1NECN/a1000avai0.4 W L-BAND POWER GaAs HJ-FET
NE651R479A-T1 |NE651R479AT1NEC ?N/a8500avai0.4 W L-BAND POWER GaAs HJ-FET


NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETapplications for mobilecommunication and wireless PC LAN systems. It is capable of delivering 0.4 ..
NE651R479A-T1 ,0.4 W L-BAND POWER GaAs HJ-FETDATA SHEETN-CHANNEL GaAs HJ-FETNE651R479A0.4 W L-BAND POWER GaAs HJ-FETDESCRIPTIONThe NE651R47 ..
NE663M04-T2 ,NPN silicon high frequency transistor.FEATURES• HIGH GAIN BANDWIDTH: fT = 15 GHz2• HIGH POWER GAIN: IS21EI = 11 dB TYP at 2 GHz• LOW NOIS ..
NE68119-T1 ,NECs NPN SILICON HIGH FREQUENCY TRANSISTORapplications up to 4 GHz. The NE681 die is also18 (SOT 343 STYLE) SUPER MINI MOLD)available in six ..
NE68519 ,NONLINEAR MODEL
NE68519-T1 ,SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTORFEATURES• LOW COST• SMALL AND ULTRA SMALL SIZE PACKAGES• LOW VOLTAGE/LOW CURRENT OPERATION• HIGH GA ..
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-121J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD
NL322522T-150J , SMD


NE651R479A-T1

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