NE5510279A-T1 ,3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers.FEATURES OUTLINE DIMENSIONS (Units in mm)• HIGH OUTPUT POWER:PACKAGE OUTLINE 79A32 dBm TYP at VDS = ..
NE5511279A-T1 ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONSPout Output ..
NE5511279A-T1-A ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETFEATURES• HIGH OUTPUT POWER: PACKAGE OUTLINE 79A Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 ..
NE5512 ,Dual high-performance operational amplifier
NE5512 ,Dual high-performance operational amplifier
NE5512 ,Dual high-performance operational amplifier
NJW1191V , 4-channel Electronic Volume with Input Selector
NJW1504V , PLL Synthesizer with IC Bus for TV Tuner
NJW4301 , 2 CHANNEL BRIDGE DRIVER IC
NJW4301M , 2 CHANNEL BRIDGE DRIVER IC
NKA0512SC , Isolated Sub-Miniature 1W Dual Output DC/DC Converters
NKA0512SC , Isolated Sub-Miniature 1W Dual Output DC/DC Converters
NE5510279A-T1
