NE532N. ,Low power dual operational amplifi
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NE5500179A-T1 ,SILICON POWER MOS FETDATA SHEETSILICON POWER MOS FETNE5500179A4.8 V OPERATION SILICON RF POWER LD-MOS FETFOR 1.9 ..
NE5500179A-T1 ,SILICON POWER MOS FETFEATURES• High output power : Pout = 30.0 dBm TYP. (VDS = 4.8 V, IDset = 200 mA, f = 1.9 GHz, Pin = ..
NE5510279A-T1 ,3.5 V operation silicon RF power MOSFET for GSM1800 transmission amplifiers.FEATURES OUTLINE DIMENSIONS (Units in mm)• HIGH OUTPUT POWER:PACKAGE OUTLINE 79A32 dBm TYP at VDS = ..
NE5511279A-T1 ,NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FETELECTRICAL CHARACTERISTICS (TA = 25°C)SYMBOL PARAMETER MIN TYP MAX UNIT TEST CONDITIONSPout Output ..
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NE532N.
