NDT456P ,P-Channel Enhancement Mode Field Effect TransistorApplications on 4.5"x5" FR-4 PCB under still air environment,JC CAθ θRJAθo2C o2b. C r.o2C/W r.1c1b1 ..
NDT456P ,P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer power management, battery powered circuits,and DC motor co ..
NDT456P ,P-Channel Enhancement Mode Field Effect Transistor
NDT456P ,P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionEnhancement Mode Field Effect TransistorNDT456P (TAV VI V V µ AT µ AI VI V )V V ..
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NDT456P
P-Channel Enhancement Mode Field Effect Transistor
December 1998 P-Channel Features Power SOT P-Channel enhancement mode power fieldA, -30 V. R W @ V = -10 V ) effect transistors are produced using Fairchild's R = 0.045 W @ V = -4.5 V .) proprietary, high cell density, DMOS technology. This very high density process is especially tailored toHigh density cell design . minimize on-state resistance and provide superior switching performance. These devices are particularly used surface mount package. suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control. DD GDSSG TA VV VV I±AD ± P3WD TJ R q R q © 1998 NDT456P Rev. F JC °C/W12 (Note 1)Thermal Resistance, Junction-to-Case JA °C/W42 (Note 1a) Thermal Resistance, Junction-to-Ambient THERMAL CHARACTERISTICS STG °C5 to 150-6Operating and Storage Temperature Range,T 1.1 (Note 1c) 1.3(Note 1b) (Note 1a)Maximum Power Dissipation 20- Pulsed 7.5 (Note 1a)- Continuous Drain Current GSS ±20Gate-Source Voltage DSS -30Drain-Source Voltage UnitsNDT456PParameterSymbol = 25°C unless otherwise noted Absolute Maximum Ratings ______________________________________________________________________________ High power and current handling capability in a widely DS(ON) for extremely low R GSDS(ON GSDS(ON = 0.030 -7.5 General Description Enhancement Mode Field Effect Transistor NDT456P
