NDT454P ,P-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT455N ,N-Channel Enhancement Mode Field Effect TransistorElectrical Characteristics (T = 25°C unless otherwise noted)ASymbol Parameter Conditions Min Typ Ma ..
NDT455N ,N-Channel Enhancement Mode Field Effect Transistor
NDT456 ,P-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionEnhancement Mode Field Effect TransistorNDT456P (TAV VI V V µ AT µ AI VI V )V V ..
NDT456 ,P-Channel Enhancement Mode Field Effect Transistorapplications such as notebook computer power management, battery powered circuits,and DC motor co ..
NDT456P ,P-Channel Enhancement Mode Field Effect TransistorApplications on 4.5"x5" FR-4 PCB under still air environment,JC CAθ θRJAθo2C o2b. C r.o2C/W r.1c1b1 ..
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NDT454P
P-Channel Enhancement Mode Field Effect Transistor
June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor General Description Features -5.9A, -30V. R = 0.05W @ V = -10V Power SOT P-Channel enhancement mode power field effect DS(ON) GS R = 0.07W @ V = -6V transistors are produced using Fairchild's proprietary, high cell DS(ON) GS R = 0.09W @ V = -4.5V. density, DMOS technology. This very high density process is DS(ON) GS especially tailored to minimize on-state resistance and provide High density cell design for extremely low R DS(ON). superior switching performance. These devices are particularly High power and current handling capability in a widely used suited for low voltage applications such as notebook computer surface mount package. power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed. ____________________________________________________________________________________________ D D G D S S G Absolute Maximum Ratings T = 25°C unless otherwise noted A Symbol Parameter NDT454P Units V Drain-Source Voltage -30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current - Continuous (Note 1a) ±5.9 A D - Pulsed ±15 P Maximum Power Dissipation (Note 1a) 3 W D (Note 1b) 1.3 (Note 1c) 1.1 Operating and Storage Temperature Range -65 to 150 °C T ,T J STG THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W R JA q Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W R JC q * Order option J23Z for cropped center drain lead. © 1997 NDT454P Rev. D2
